Molecular Doping Enabling Mobility Boosting of 2D Sn<sup>2+</sup>‐Based Perovskites (Adv. Funct. Mater. 38/2022)

Youjin Reo,Huihui Zhu,Ao Liu,Yong‐Young Noh
DOI: https://doi.org/10.1002/adfm.202270211
IF: 19
2022-01-01
Advanced Functional Materials
Abstract:2D Sn2+-Based Perovskites In article number 2204870, Yong-Young Noh and co-workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high-efficiency optoelectronic devices. A thin p-type dopant layer, F4-TCNQ and MoO3, deposited using thermal evaporation improves the control of damage-free electronic doping. The efficient charge transfer without deterioration of the perovskite microstructure improves the Hall mobility up to 100 cm2 V−1 s−1.
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