Editorial: Hybrid Perovskite Crystals Design, Growth, and Their Photoelectric Properties

Xinbo Guo,Zhaolai Chen
DOI: https://doi.org/10.3389/fchem.2022.938893
IF: 5.5
2022-01-01
Frontiers in Chemistry
Abstract:The past years have seen the rapid development of halide perovskite solar cells, light emission diodes (LEDs), X-ray detectors, and photodetectors, due to the superior optoelectronic properties of perovskite materials, such as tunable bandgap, long carrier diffusion length, and high carrier mobility. Up to now, polycrystalline perovskite solar cells hold a record efficiency of over 25%, which is comparable with the commercialized Si solar cells. Further improving the optoelectronic devices requires tailoring the crystal growth process which is crucial to reduce the defect density and inhibit carrier recombination. Another way to enhance the device performance is the utilization of perovskite single crystals that possess much better electrical properties than polycrystalline perovskites. The main drawbacks of bulk perovskite single crystals include difficult substrate integration, too large thickness, inefficient carrier collection, low photoluminescence quantum yield (PLQY), etc. To take full advantage of the superior properties of perovskite single crystals, thickness and morphology control are necessary. In order to fully understand the formation of polycrystalline thin films, Kumar et al. reviewed the fabrication process of polycrystalline thin films and the critical factors influencing the crystal growth. This review described three techniques to optimize the film morphology and device performance: substrate temperature treatment, antisolvent treatment, and cosolvent engineering. They think the key parameter deciding the nucleation and subsequent growth of the nucleated particles is the Gibbs free energy. Through changing substrate temperature to control the volatilization rate of solvent or dripping antisolvent, the grain size and coverage of thin films can be modulated. Apart from this, the solvent boiling point, coordination affinity, and dipole strength also play a significant role in deciding the ultimate film morphology, defect density, and charge transfer resistance. This review is instructive for an understanding of crystallization process of perovskite films, which is beneficial for regulating defect density in the active layer to suppress ion migration and improve material properties. Perovskite single crystals are ideal candidates for X-Ray detectors due to their large carrier mobility-lifetime product. A key challenge is growing large single crystals with controlled thickness directly on substrates. To this end, Feng et al. reported the growth of methylammonium lead tribromide (MAPbBr3) single crystals directly on indium tin oxide (ITO) substrates through inverse temperature crystallization and succeeded in controlling the thickness of the crystal wafer through regulating the distance between solution surface and substrate. When the crystal surface is close to the solution surface, the vertical growth stops while the lateral growth continues, thus resulting in a thickness-controlled, substrate-integrated, and inch-sized single-crystal wafer. The crystal thicknesses can be adjusted from 1 to 3.5 mm. Subsequently, through surface polishing and O3 treatment, the surface traps are passivated, leading to X-Ray detectors with a sensitivity of 632 μC Edited and reviewed by: Andrzej Grzechnik, RWTH Aachen University, Germany
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