Abstract:Bipolar junction transistors (BJTs) are generally employed in spacecraft, due to their current drive capability, linearity and excellent matching characteristics. High-energy particles and cosmic rays in space environment remarkably affect electronic devices, especially in BJTs producing total ionizing dose, displacement damage or single event effect. Among them, ionizing irradiation effects on BJTs dominates. For BJTs, ionization damage can induce the oxide trapped charges in SiO2 layer and interface traps in Si/SiO2, resulting in more recombination base current and the degradation of current gain. Consequently, the accumulation of both oxide charges and interface traps causes an increase in the base current. Passivation layer is also an important factor of the irradiation effects of BJTs. Previous works only studied the degradation of electrical properties of the devices with/without passivation layer induced by irradiation, and did not give an influence mechanisms of passivation layer on the irradiation respond of devices. Therefore, the irradiation damage mechanisms of the BJTs with or without nitride passivation layer are not clear so far. In this paper, the impact of Si3N4 passivation layer on ionizing irradiation damage on lateral PNP bipolar transistors (LPNP) was studied by using Co-60 gamma irradiation source. The KEITHLEY 4200-SCS semiconductor parameter analyzer was used to measure the relationship between the electrical properties of LPNP transistors and ionization dose, including the Gummel characteristics, the degradation of current gain, etc. The irradiation defects of the LPNP transistors with/without passivation layer structure were analyzed by the deep level transient spectroscopy (DLTS). The experimental results show that the electrical properties of the LPNP transistors with and without passivation layer exhibit similar characteristics. For all samples, the base current increases with increasing the total dose, while the collector current does not almost change. Compared with the LPNP transistors without Si3N4 passivation layer, the degradation of LPNP transistor with Si3N4 passivation layer is severe. Based on the excess base current as a function of base-emitter voltage for the LPNP transistors with/without nitride passivation layer, the degradation of bipolar transistors with nitride passivation layer is severe under the same irradiation conditions. The DLTS analyses show that compared with the bipolar transistors without nitride passivation layer, the signal peak located at about 300 K is shifted to low temperature for the bipolar transistors with nitride passivation layer. The above results show that the LPNP transistors with nitride passivation could produce a large number of interface states with the energy level is closer to the middle of the forbidden band during the irradiation, which is attributed to a large number of hydrogen presence during the processing of fabricated passivation layer.

Investigation of Neutron Displacement Effects in Bipolar Amplifiers with Lateral and Substrate P-N-p Input Transistors

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

Analysis of Displacement Damage Effects on Bipolar Transistors Irradiated by Spallation Neutrons

Displacement and Transient Ionizing Synergistic Effects in Μa741 Bipolar Amplifier

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

Development of SPICE Compact Model of Neutron Displacement Effects in Lateral PNP Bipolar Transistor

Degradation mechanisms of current gain in NPN transistors

Synergistic Effects of NPN Transistors Caused by Combined Proton Irradiations with Different Energies

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Synergistic Effect of Mixed Neutron and Gamma Irradiation in Bipolar Operational Amplifier Op07

Simultaneous and Sequential Radiation Effects on Npn Transistors Induced by Protons and Electrons

Combined Radiation Effects of Protons and Electrons on NPN Transistors

Synergistic Effect of Ionization and Displacement Damage in Npn Transistors Caused by Protons with Various Energies

Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors

Effect of displacement radiation damage on bipolar junction transistors under various bias conditions

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

The Influence of Bias Conditions on Ionizing Radiation Damage of NPN and PNP Transistors?

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Photocurrent of Substrate PNP Bipolar Transistor Submitted to Pulsed X-ray Irradiation: the Influence of Neutron Displacement Damage

Research on interaction between displacement defects and oxide charge in NPN transistors based on deep level transient spectroscopy