Abstract:In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics.

Effect of Metal Hf Interlayer on the Electric Properties of HfO2 Films Deposited by Reactive Magnetron Sputtering

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Ferroelectricity in the Al doped HfO2

Effects of Different Metal Electrodes on the Ferroelectric Properties of HZO Thin Films

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Ferroelectric and electric field cycling properties of un-doped HfO2 films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO2 Thin Films

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films