High-performance photodetectors based on low-defect CsPb1-xZnxBr3 quantum dots
Sainan Liao,Mengwei Chen,Jing Li,Rui Zhang,Yingping Yang
DOI: https://doi.org/10.1007/s10854-024-12488-6
2024-04-07
Journal of Materials Science Materials in Electronics
Abstract:All-inorganic CsPbBr 3 perovskite quantum dots (QDs) have broad applications of optoelectronics field due to their high photoluminescence quantum yield, high charge carrier mobility, and bandgap tunability. However, the combination of the abundant trap states generated by purification and the instability caused by external factors such as water, oxygen, light, and heat poses a critical hurdle for the fabrication of high-performance photodetectors. In this work, CsPb 1- x Zn x Br 3 QDs with low defect and high performance were prepared by passivating the CsPbBr 3 lattice through Zn 2+ doping. The approach of doping not only increases the effective Goldschmidt tolerance factor and improves the tolerance of phase changes caused by purification, but also acquires QDs with lower defect density and stable cubic phase. In the self-powered mode, the CsPb 0.95 Zn 0.05 Br 3 QDs photodetectors have an extremely low dark current of 1.85 × 10 –12 A, an ultrahigh on/off ratio of 10 7 . Compared with CsPbBr 3 QDs photodetectors, the responsivity( R ) of CsPb 0.95 Zn 0.05 Br 3 QDs photodetectors is increased by 200% from 0.08 A/W to 0.24 A/W, and the specific detectivity ( D *) rate up to 6.19 × 10 13 Jones which is more than an order of magnitude higher than that of the pristine photodetector.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied