A High-Frequency Online Junction Temperature Monitoring Method for SiC Mosfets Based on On-State Resistance with Aging Compensation

Qinghao Zhang,Geye Lu,Yanyong Yang,Pinjia Zhang

DOI: https://doi.org/10.1109/tie.2022.3204948

IF: 7.7

2023-01-01

IEEE Transactions on Industrial Electronics

Abstract:Online junction temperature (T j) monitoring is critical for high reliability operation of semiconductor devices. ON-state drain-source resistance (R (ON)) is the most widely used T j indicator for SiC metal oxide semiconductor field effect transistors (MOSFETs). However, in conventional R (ON-)based methods, the switching frequency of the tested SiC MOSFET is limited to a narrow range by the ON-state voltage (V ON) measuring circuit (OVMC). In other words, existing OVMC cannot match the high-frequency characteristic of SiC MOSFETs. Moreover, T j estimating accuracy is reduced by the aging effect because the relationship between T j and R (ON) changes with aging levels. To solve these problems, an effective online T j monitoring method for SiC MOSFETs is proposed based on R (ON). First, theoretical analysis indicates that R (ON) is an effective indicator. Second, a high-frequency OVMC is proposed. Third, a T j monitoring strategy with aging compensation is proposed. Finally, the effectiveness of the proposed method is validated by online experiments. Experimental results indicate that both the accuracy and the switching frequency are improved compared with conventional R ON-based methods.