A Transient-Improved Spike Time Reduction Circuit for LDO

Zongyuan Zheng,Chen Zhang,Bo Wang,Xinan Wang
DOI: https://doi.org/10.1109/cstic55103.2022.9856816
2022-01-01
Abstract:In this paper, a spike time reduction circuit is proposed for improving the transient response of low-dropout (LDO) voltage regulator. Test results show that the circuit can significantly reduce the overshoot recovery time of output voltage after the sudden load current decrease. The main part of presented circuit includes an asymmetrical comparator and a discharging transistor. By setting a lower comparator input reference voltage value or increasing the size of the discharging transistor, the overshoot recovery time can be reduced from $240.5\mu \mathrm{s}$ to $126.1\mu \mathrm{s}$ during load current change from 1mA to 200mA. The prototype of the circuit is fabricated by 0.18um CMOS processes. Its consumption is only 102.4nA. The circuit has been verified on a commercial LDO production.
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