A transient enhancement circuit for capacitance-less LDO

WANG Chang,WU Zhen,DENG Chao-yong
DOI: https://doi.org/10.3969/j.issn.1674-6236.2013.04.005
2013-01-01
Abstract:A new transient response enhancement circuit topology for LDO is presented based on the ideology of the RC high-pass circuit.The design enables fast-transient behavior,which doesn't bring the power dissipation increase during the circuit normal operation periods.The chip design is based on 0.18 μm CMOS mixed-signal process of SMIC.The simulation results indicate that the quiescent current of the overall system is just 3.2 μA,the phase margin is over 90.19°.When the LDO regulates at a 1.8 V supply and a 1.3 V output,and the load current drops from 100 m A to 50 mA in 10 ns,the settle time decreases from 28 to 8 μs.Analogously,when the load current is 100 mA,and the supply voltage of the LDO increases from 1.8 V to 2.3 V in 10 ns,the settle time of the output voltage changes from 47 to 15 μs.
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