Abstract:The forefront of neuromorphic research strives to develop devices with specific properties, i.e. , linear and symmetrical conductance changes under external stimuli. This is paramount for neural network accuracy when emulating a biological synapse. A parallel exploration of resistive memory as a replacement for conventional computing memory ensues. In search of a holistic solution, the proposed memristive device in this work is uniquely poised to address this elusive gap as a unified memory solution. Opposite biasing operations are leveraged to achieve stable abrupt and gradual switching characteristics within a single device, addressing the demands for lower latency and energy consumption for binary switching applications, and graduality for neuromorphic computing applications. We evaluated the underlying principles of both switching modes, attributing the anomalous gradual switching to the modulation of oxygen-deficient layers formed between the active electrode and oxide switching layer. The memristive cell (1R) was integrated with 40 nm transistor technology (1T) to form a 1T–1R memory cell, demonstrating a switching speed of 50 ns with a pulse amplitude of ±2.5 V in its forward-biased mode. Applying pulse trains of 20 ns to 490 ns in the reverse-biased mode exhibited synaptic weight properties, obtaining a nonlinearity (NL) factor of 10 6 cycles, and their conductance states were also stable under temperature stress at 85 °C for 10 4 s. With the duality of the two switching modes, our device can be used for both memory and synaptic weight-storing applications.

Multilevel resistive switching and synaptic behaviors in MnO-based memristor

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

Controllable Analog-to-digital Bipolar Resistive Switching Behavior and Mechanism Analysis in Δ-Mno2-based Memristor

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

Synaptic Memory Devices from CoO/Nb:SrTiO3 Junction.

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Reliable resistive switching and synaptic simulation behaviors in ammonium polyphosphate-based memristor with non-inert Al electrode

Nonvolatile resistive switching characteristics based on Ni–Al LDHs and its electronic synapse application

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

A Synaptic Transistor Based on Quasi-2d Molybdenum Oxide

Multistate Resistive Switching with Self-Rectifying Behavior and Synaptic Characteristics in a Solution-processed ZnO/PTAA Bilayer Memristor

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

A Highly Reliable Molybdenum Disulfide-Based Synaptic Memristor Using a Copper Migration-Controlled Structure

Controllable analog-to-digital bipolar resistive switching behavior and mechanism analysis in 8-MnO2-based memristor

Electronic Imitation of Behavioral and Psychological Synaptic Activities Using Tiox/Al2o3-Based Memristor Devices

Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor