Referential tuning strategy for high-lying triplet energy level setting in OLED emitter with hot-exciton characteristics

Qinqin Ke,Yuyue Song,Ganggang Li,Baoxi Li,Yiwen Chen,Qing Wan,Dongge Ma,Zhiming Wang,Ben Zhong Tang
DOI: https://doi.org/10.1039/d2tc01036d
IF: 6.4
2022-01-01
Journal of Materials Chemistry C
Abstract:"Hot-exciton" emitters featuring high-lying reverse intersystem crossing (hRISC) have served as promising candidates due to their improved exciton utilization efficiency and efficiency roll-off in organic light-emitting diodes (OLEDs). Generally, optimal and expected hRISC processes should take place from T-2 to S-1, which could be achieved by fabricating a larger energy gap between T-2 and T-1 (Delta E-T2T1) and a small energy difference between T-2 and S-1 (Delta E-T2S1). The accurate and controlled regulation of the distribution of excited-state energy levels showed the special importance of activating hRISC but, regrettably, work has rarely been reported on how to regulate the position of high-lying triplet levels. In this work, two similar emitters (2NpNMZ and 2AnNMZ) were designed to attempt to tune the T-2 state based on a new "hot-exciton" core of naphtho[2,3-d][1,2,3]triazole (NMZ). An interesting discovery was that the T-2 levels of the two emitters were contributed by the T-1 levels of the corresponding substituent group, which was ascribed to the orbital electrons on the T-2 state being concentrated in substituent units (naphthalene and anthracene). Their T-1 energy levels were similar because the orbital electrons of the T-1 state were both contributed by the NMZ core. 2NpNMZ possessed larger Delta E-T2T1 than 2AnNMZ because of the higher T-1 level of Np than that of an An unit, which might suppress the internal conversion of a T-2 exciton to a T-1 platform (T-2 -> T-1). In addition, the higher PLQY in neat film and smaller Delta E-T2S1 mean 2NpNMZ enjoys better efficiency than 2AnNMZ when they are used as the emitting layers of non-doped OLEDs.
What problem does this paper attempt to address?