Improving Reverse Intersystem Crossing of MR-TADF Emitters for OLEDs

Xufeng Luo,Lixiu Zhang,Youxuan Zheng,Liming Ding
DOI: https://doi.org/10.1088/1674-4926/43/11/110202
2022-01-01
Journal of Semiconductors
Abstract:Thermally activated delayed fluorescence(TADF)emitter is a promising organic light-emitting diode(OLED)material due to low cost,wide luminous color gamut and 100%ex-citon utilization efficiency[1].To achieve high TADF perform-ance,a feasible strategy is to construct a twisted donor-acceptor(D-A)unit,decreasing the overlap between the highest occupied molecular orbital(HOMO)and the lowest un-occupied molecular orbital(LUMO),and minimizing the en-ergy gap(△EST)between the lowest singlet(S1)and triplet(T1)states[2,3].However,this long-range charge transfer fea-ture is often disadvantageous for achieving high oscillator strengths(f)and radiative transition rates(kr)[4](Fig.1(a)).Moreover,common TADF emitters always display broad elec-troluminescence spectra,whose full-widths at half-maximum(FWHMs)are 70-100 nm[5].Therefore,it is necessary to real-ize a narrow-band emission system,which can improve the dis-play quality greatly,with high kr and high rate constant of re-verse intersystem crossing(kRISC).
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