Abstract:SnO2 has the advantages of excellent photostability and can be prepared at low-temperature below 200 ℃. It is regarded as one of the excellent materials for the electron transport layer, and widely used in efficient and stable planar heterojunction perovskite solar cells. In this work, the low-cost, dense and uniform SnO2 electron transport layer is prepared by spin coating at low temperature (150 ℃) for perovskite solar cells with a structure of FTO/SnO2/CH3NH3PbI3 (MAPbI3)/Spiro-OMeTAD/Au. The crystallization and photoelectric properties of SnO2 electron transport layers prepared at different concentrations (2.5%–10%) at 150 ℃, and the influences of SnO2 electron transport layers on the formation of perovskite films and the performances of perovskite solar cells are discussed. By analyzing the scanning electron microscope (SEM), ultraviolet-visible light absorption spectrum (UV-Vis) and transmission spectrum of the SnO2 film, it is found that the coverage and light transmittance of the substrate and band gap of the SnO2 film increase as the SnO2 content increases, while the absorbance decreases. By analyzing the SEM, UV-Vis, X-ray diffraction (XRD) and steady-state photoluminescence spectrum (PL) analysis of the SnO2/MAPbI3 thin film, it is found that the MAPbI3 deposited on the SnO2 layer with a concentration of 7.5% is uniform and pinhole-free, has the largest particle size and the best crystallinity, as well as more effective charge extraction capability and transport capability. By analyzing the electrochemical impedance (EIS) and external quantum efficiency (EQE) of the device, the SnO2 electron transport layer with a concentration of 7.5% has better interface contact and lower interface resistance, which is beneficial to reducing the recombination of carriers and improving the photoelectric conversion capability, The perovskite solar cells based on SnO2 layer prepared with a concentration of 7.5% reaches a photoelectric conversion efficiency of 15.82% (Voc = 1.06 V, Jsc = 21.62 mA/cm2, FF = 69.40%), After storing for 600 h in ambient air ((25±5) ℃, RH>70%) without encapsulation, its efficiency remains 92% of the initial efficiency. At the same time, we prepare flexible devices on flexible substrates (TIO/PEN) by using SnO2 precursor with a concentration of 7.5%, which exhibits good photovoltaic performance and achieves a photoelectric conversion efficiency of 13.12%, and storage time for 84 d in ambient air ((30±5) ℃, RH>70%) without encapsulation, its efficiency remains 48% of the initial efficiency. The PCE retains 78% of the initial efficiency after 1000 bending cycles with a bending radius of 3 mm. The study of optimizing the concentration of SnO2 has laid a foundation for improving the performance of flexible perovskite solar cells.

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Tin Oxide Bilayer as Effective Electron Transport Layers for Efficient and Stable Perovskite Solar Modules

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TiO2/SnO2 Bilayer Electron Transport Layer for High Efficiency Perovskite Solar Cells

A low-temperature TiO2/SnO2 electron transport layer for high-performance planar perovskite solar cells

Effect of SnO2 Colloidal Dispersion Solution Concentration on the Quality of Perovskite Layer of Solar Cells

High‐Efficiency and Stable Perovskite Solar Cells via Buried Interface Modification with Multi‐Functional Phosphorylcholine Chloride

Low-temperature Preparation of SnO<sub>2</sub> Electron Transport Layer for Perovskite Solar Cells

Non-ionic polymeric polyacrylamide (PAM) modified SnO 2 electron transport layer for high-efficiency perovskite solar cells

Synergetic Optimization of Upper and Lower Surfaces of the SnO2 Electron Transport Layer for High-Performance N-I-p Perovskite Solar Cells

CuCl2-modified SnO2electron Transport Layer for High Efficiency Perovskite Solar Cells.

Facilitating Electron Transport in Perovskite Solar Cells through Tailored SnO2 Film Composition

Fullerene Derivative-Modified SnO2 Electron Transport Layer for Highly Efficient Perovskite Solar Cells with Efficiency over 21

Buried Interface Modification of Condensation Reflux-Processed SnO2 Electron Transport Layers for CsPbBr3 Perovskite Solar Cells