Abstract:Optoelectronic synapses possess the potential to seamlessly integrate perception, storage, and neuromorphic computation, thereby offering advantages in constructing artificial vision systems. Gallium nitride (GaN) materials, renowned for their exceptional optoelectronic characteristics and the compatibility of Silicon-based GaN (GaN-on-Si) with CMOS technology, contribute significantly to realizing large-scale optoelectronic neuromorphic circuits. In this study, we present an optoelectronic dual-synapse based on a structurally-improved AlGaN/GaN MIS-HEMT with ring-shaped SiO2 barriers embedded surrounding the source and drain regions. This device facilitates simultaneous signal transmission to the source and drain through current-limiting electrical breakdown beneath the gate. This integration of two discrete optoelectronic synapses within a single device enhances neural signal transmission nodes and branching connectivity, facilitating the construction of large-scale neuromorphic circuits. Under the co-influence of electrical and optical pulses, the device not only demonstrates excellent optoelectronic synaptic characteristics but also exhibits the ability to modulate the critical wavelength of synaptic responses by varying the source/drain voltage, effectively simulating the light signal recognition observed in biological retinas. The synergistic operation of the two sub-synapses enables a successful transition from short-term potentiation (STP) to long-term potentiation (LTP). Furthermore, leveraging the device's STP, we emulate the function of artificial retina through a GaN optoelectronic neuromorphic array, successfully achieving image recognition in conjunction with artificial neural networks (ANNs). The devices developed in this study, based on GaN-on-Si allow wafer-level manufacturing, provding a promising avenue for the large-scale production of optoelectronic synapse devices and the realization of artificial vision systems.

Light-stimulated Artificial Synapses Based on Si-doped GaN Thin Films

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Optoelectronic Dual-Synapse Based on Wafer-level GaN-on-Si Device Incorporating Embedded SiO2 Barrier Layers

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing

Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing

Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

Amorphous Ga2O3/GaN heterostructure for ultralow-energy-consumption optically stimulated synaptic devices

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

Optically Stimulated Synaptic Devices Based on Silicon-Tin Alloyed Thin Film

Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In2O3/AlLiO Thin-Film Transistor

Light-Emitting Artificial Synapses for Neuromorphic Computing

Fully solution-processed InSnO/HfGdO X thin-film transistor for light-stimulated artificial synapse

AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

A Light-Stimulated Synaptic Transistor with Synaptic Plasticity and Memory Functions Based on InGaZnOx–Al2O3 Thin Film Structure

Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality

Fully solution-processed InSnO/HfGdO<i> <sub>X</sub> </i> thin-film transistor for light-stimulated artificial synapse

Light-Activated Artificial Synapses Based on Graphene Hybrid Phototransistors

Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors