A Light-Stimulated Synaptic Transistor with Synaptic Plasticity and Memory Functions Based on InGaZnOx–Al2O3 Thin Film Structure

H. K. Li,T. P. Chen,P. Liu,S. G. Hu,Y. Liu,Q. Zhang,P. S. Lee
DOI: https://doi.org/10.1063/1.4955042
IF: 2.877
2016-01-01
Journal of Applied Physics
Abstract:In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
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