Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering
Julia A. Mundy,Bastien F. Grosso,Colin A. Heikes,Dan Ferenc Segedin,Zhe Wang,Yu-Tsun Shao,Cheng Dai,Berit H. Goodge,Quintin N. Meier,Christopher T. Nelson,Bhagwati Prasad,Fei Xue,Steffen Ganschow,David A. Muller,Lena F. Kourkoutis,Long-Qing Chen,William D. Ratcliff,Nicola A. Spaldin,Ramamoorthy Ramesh,Darrell G. Schlom
DOI: https://doi.org/10.1126/sciadv.abg5860
IF: 13.6
2022-02-04
Science Advances
Abstract:Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
multidisciplinary sciences