In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces
Jie Sun,Yiming Li,Yangjun Ou,Qianwei Huang,Xiaozhou Liao,Zibin Chen,Xiaojie Chai,Xiao Zhuang,Wendi Zhang,Chao Wang,Jun Jiang,Anquan Jiang
DOI: https://doi.org/10.1002/adfm.202207418
IF: 19
2022-10-07
Advanced Functional Materials
Abstract:The study finds multilevel ferroelectric domain wall diodes at the LiNbO3 interface and proposes three‐terminal ferroelectric DW transistors fabricated at the surface of the polarized LiNbO3 single crystal. These transistors can function as NOT, NAND, and NOR logic gates in addition to intrinsic nonvolatile data storage. Direct data processing in nonvolatile memories can enable area‐ and energy‐efficient computation, unlike independent performance between separate processing and memory units; repetitive data transfer between these units represents a fundamental performance limitation in modern computers. Spatially mobile conducting domain walls in ferroelectrics can be redirected between drain, gate, and source electrodes to function as nonvolatile transistors with superior energy efficiency, ultrafast operating and communication speeds, and high logic/storage densities. Here, in‐memory computing is demonstrated using multilevel domain wall diodes at LiNbO3 interfaces. Ultrathin domains within interfacial layers between each mesa‐like memory cell and the contact electrodes can rectify diode‐like domain wall currents with on/off current ratios exceeding 107 at low operating voltages, surpassing the performance of traditional p‐n junctions using built‐in potentials across depletion layers. NOT, NAND, and NOR gate logic functions are demonstrated, providing insights into high‐density integration of multilevel storage and computational units in all‐ferroelectric domain wall devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology