Abstract:The recently discovered magnetic topological insulator of $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$, has been successfully used to explore emerging physical phenomena, such as the quantum anomalous Hall effect (QAHE) and axion insulator state. Based on first-principles calculations, we have systematically investigated the electronic, magnetic, and topological properties of layered $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$, where those materials host similar crystal structure as the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$. Our calculations first show that each bulk system with antiferromagnetic order can be converted into a three-dimensional topologically nontrivial insulator by applying appropriate pressure. Then, we find that ferromagnetic (FM) $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ is a type II Weyl semimetal with a single pair of Weyl points near Fermi level. Specifically, FM $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$ and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ can be readily converted into Weyl semimetals under pressure. Furthermore, we notice that QAHE can also be achieved in layered FM $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ and $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$. All those findings demonstrate that the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$-like materials of $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ are promising candidates to explore intriguing topological quantum states.

Layer-dependent zero-line modes in antiferromagnetic topological insulators

Topological surfaces of domain wall-decorated antiferromagnetic topological insulator MnBi$_{2n}$Te$_{3n+1}$

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Intrinsic Magnetic Topological Insulators in Van Der Waals Layered MnBi2Te4-family Materials

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb 2 Te 4

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Direct visualization of edge state in even-layer MnBi2Te4 at zero magnetic field

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}.

Tunable Topological States in Layered Magnetic Materials of MnSb2Te4, MnBi2Se4 , And

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Mapping Dirac fermions in the intrinsic antiferromagnetic topological insulators ( Mn Bi 2 Te 4 ) ( Bi 2 Te 3 ) n ( n = 0 , 1 )

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb<sub>2</sub>Te<sub>4</sub>

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

The Mechanism Exploration for Zero-Field Ferromagnetism in Intrinsic Topological Insulator MnBi2Te4 by Bi2Te3 Intercalations

Intrinsic Topological Phases in Mn2Bi2Te5 Tuned by the Layer Magnetization

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Topological Domain-Wall States Hosting Quantized Polarization and Majorana Zero Modes Without Bulk Boundary Correspondence

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Magnetic and Transport Properties in the Magnetic Topological Insulators MnBi2Te4(Bi…