Improving 3-D NAND SSD Read Performance by Parallelizing Read-Retry

Jinhua Cui,Zhimin Zeng,Jianhang Huang,Weiqi Yuan,Laurence T. Yang
DOI: https://doi.org/10.1109/tcad.2022.3191256
IF: 2.9
2023-01-01
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Abstract:With the bit density improvement and the 3-D flash techniques, modern NAND flash-memory-based solid-state disks (SSDs) dramatically increase the flash storage capacity. However, in high-density SSDs, the long read latency overheads due to massive read-retry steps have become a serious performance concern to develop flash memory in storage devices. In this article, we proposed a parallel read-retry scheme (PaRR) to utilize the read-retry characteristics among flash memory cells. Specifically, when reading the multiple data pages simultaneously, PaRR reduces the read-response time by parallelizing read-retry operations. PaRR reduces the number of read-retry operations by parallelizing read-retry steps with the different aggressive read reference voltages if simultaneously reading the data pages that exhibit virtually equivalent reliability characteristic. Our evaluation shows that PaRR improves the I/O performance by 33.77% on average compared with the state-of-the-art scheme.
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