Realization of Long Retention Properties of Quantum Conductance Through Confining the Oxygen Vacancy Diffusion

Jianhui Zhao,Yong Sun,Wanheng Lu,Yifei Pei,Zhenyu Zhou,Rui Guo,Kaiyang Zeng,Baoting Liu,Qiuming Peng,Jingsheng Chen,Xiaobing Yan

DOI: https://doi.org/10.1063/5.0082919

IF: 15

2022-01-01

Applied Physics Reviews

Abstract:Quantum conductance, known as Sharvin point contact, has been extensively investigated in many electronic devices, including diodes, transistors, and switches, especially in conductive filaments-based memristors. Quantum conductance with one or multiple atoms point connection can overcome the limitations of scaling and operating speed of nonvolatile multiple memory, logic device, and brain-inspired computing systems. However, because of the instability of the atomic arrangement in the one/multiple atoms connection in a conductive filaments-based memristor, it is a great challenge to maintain quantum conductance states for a long time. Here, we demonstrate that the stable long-time retention of multi-level quantum conductance states can be realized in Mott insulator vanadium dioxide with a highly oriented crystalline texture. According to in situ transmission electron microscope, conductive atomic force microscope, and detailed energy band analysis results, it is proposed that the grain boundaries act as reservoirs for oxygen vacancies and confine the oxygen vacancy diffusion in the narrow grain boundaries due to the higher bulk diffusion barrier. Our approach is extremely crucial for realizing quantum conductance-based electronic devices, such as multi-level and high-density storage and neuromorphic computing.