Abstract:Silicon photonic integration is considered to be one of the most promising techniques in realizing high-density photonic integrated circuits because of its compact device size and CMOS compatible fabrication process. However, due to the large index contrast of silicon waveguides, silicon photonic devices are affected by the large polarization mode dispersion, polarization dependent loss and polarization dependent wavelength characteristics. Polarization transparent circuits and polarization diversity schemes, which have polarization rotators and splitters as common key devices, have been proposed to solve this issue[1–3]. To date, various types of passive polarization rotators have been demonstrated[4–8], all of which are static and operation-fixed. However, the dynamic polarization switch is also needed due to its many applications, including polarization modulation[9, 10], coherent communication[11], quantum computing[12], and polarization diversity[2]. Recently, various dynamic polarization controlling devices based on silicon waveguides have been reported[13–15]. Two kinds of devices can be used to achieve a polarization switch in planar silicon waveguide circuits. The first is a phase modulator whose waveguide is illuminated at 45° of its main axis, as shown in Fig. 1(a). The input light is split into two orthogonal polarizations. With a thermal-optical controlling signal, a phase difference between the two orthogonal polarization states is produced, resulting in a changed output polarization orthogonal to its original state. However, the polarizationdependent phase shifter needs to be long enough because the polarization-dependent thermal optical effect is weak in silicon waveguides. The waveguide length is approximate 700 μm for that with SU8 upper cladding and much longer for that with SiO2 upper cladding[13]. The second consists of an ordinary polarization splitter rotator (PSR) followed by a series of 3-dB couplers and phase shifters, and a second PSR[15, 16]. This consists of many elements, including at least two PSRs, two 3-dB couplers and one phase shifter to realize polarization switch, as shown in Fig. 1(b). Here, we propose a new design of polarization switch, which consists of one phase shifter and two symmetric PSRs as shown in Fig. 1(c). The symmetric PSR utilizes the linear combination of TE0 and TM0 as orthogonal bases, while the common PSR directly utilizes the TE0 and TM0 as orthogonal bases[17]. Simulation results show that the device has a TM0-to-TE0 polarization extinction ratio of better than 30 dB over the C band. The simplified device has a shorter length of less than 300 μm compared with those previously reported.

Design of nonvolatile and efficient Polarization-Rotating optical switch with phase change material

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Silicon Polarization Switch Based on Symmetric Polarization Splitter-Rotators

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Polarization Switching of Thermal Emissions Based on Plasmonic Structures Incorporating Phase-Changing Material Ge2Sb2Te5

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Inverse Design and Numerical Investigations of an Ultra-Compact Integrated Optical Switch Based on Phase Change Material

Design of Low Loss 1 × 1 and 1 × 2 Phase-Change Optical Switches with Different Crystalline Phases of Ge2Sb2Te5 Films

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

Switchable Polarization Beam Splitter Based on GST-on-Silicon Waveguides

Fiber End-Facet Integrated Non-Volatile Optical Switch Based on Ge2Sb2Te5

Nonvolatile Switchable Broadband Polarization Conversion with Wearable Terahertz Chalcogenide Metamaterials

Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse

Wideband polarization-independent plasmonic switch based on GST phase-change material.

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Electrically Controlled 1 × 2 Tunable Switch Using a Phase Change Material Embedded Silicon Microring.

Nonvolatile Tunable Silicon-Carbide-based Midinfrared Thermal Emitter Enabled by Phase-Changing Materials.

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures