Abstract:Contriving an industry-compatible method for fabricating purely high-quality p-type two-dimensional (2D) field effect transistors (FETs) has been proved to be pressing but challenging due to the strong interfacial coupling and thus tight Fermi level pinning (FLP). Herein, by employing density functional theory calculations, a straightforward but effective strategy is proposed to achieve high-quality p-type contact in few-layer TeO 2 –Pt junction by using a build-in intercalation to suppress the FLP and shield the damage from electrodes to the excellent electrical properties of TeO 2 such as its ultra-high hole mobility. Specifically, the increase of TeO 2 layer number will make the charge distribution of VBM and CBM be more lumped in the inner core layer, as a result, the outlying Te–O sublayer can act as an inserting layer like BN to protect the semiconducting electronic states and avoid gap-state pinning. Thus, as the TeO 2 layer increases from 1 L to 3 L, (I) strong FLP in metal-TeO 2 interfaces is gradually unpinned; (II) the polarity of Pt–TeO 2 contact reverses from n-type to p-type; (III) the excellent electrical properties of TeO 2 such as hole effective mass is preserved as original despite strong charge transfer occurring at the interface. Besides, the tunnelling barrier at the interface is close to zero. This is quite different from introducing an extern BN intercalation, in which case the tunnelling through BN will prominently reduce the overall hole current. In addition, the contacts between 2D metal electrodes and monolayer TeO 2 are found to obey the Schottky-Mott rule, and thereby p-type Ohmic contacts can be obtained at TeO 2 -VS 2 , NbS 2 interfaces. Whereas, a relatively large tunnelling barrier exists at the 2D metal-TeO 2 interfaces. Our findings are quite essential and beneficial for designing high-performance p-type 2D FETs.

Schottky and Ohmic Contacts at -Tellurene/2D Metal Interfaces

Schottky and Ohmic Contacts at α-Tellurene/2D Metal Interfaces

Bilayer Tellurene–metal Interfaces

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures.

Monolayer Tellurene–metal Contacts

The Contacts of the Monolayer Semiconductor C2N with 2D Metal Electrodes

A Computational Study of Monolayer Hexagonal WTe2 to Metal Interfaces

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

General Criterion to Distinguish Between Schottky and Ohmic Contacts at the Metal/two-Dimensional Semiconductor Interface.

Formation of Ohmic contacts between ferromagnetic Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> and two-dimensional metals

End-Bonded Contacts of Tellurium Transistors

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Formation of Ohmic contacts between ferromagnetic Cr2Ge2Te6and two-dimensional metals

Formation of Ohmic contacts between ferromagnetic Cr 2 Ge 2 Te 6 and two-dimensional metals.

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Ohmic Contacts of Monolayer Tl 2 O Field-Effect Transistors

ZrTe 2 Compound Dirac Semimetal Contacts for High-Performance MoS 2 Transistors

Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO 2 by a built-in intercalation

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.