Carbon Nitride with Rationally Designed Π‐conjugated Structure for Bright Blue‐Violet Light‐Emitting Diodes (small 31/2022)

Xingchen He,Lingqiang Meng,Yanliang Liu,Xue Zhang,Ziqiang Cheng,Hao Huang,Rui He,Hao Pan,Yihong Kang,Jia Li,Yiqing Wang,Paul K. Chu,Baomin Xu,Jiahong Wang,Xue-Feng Yu
DOI: https://doi.org/10.1002/smll.202202969
IF: 13.3
2022-01-01
Small
Abstract:Carbon nitride consisting of the broken pi-conjugated structure (bc-CN) is designed as the emitting layer in a blue-violet light emitting diode (LED). The bc-CN is prepared by a metal-oxide (MgO) template-assisted method, in which the low reaction temperature and nano MgO jointly control the degree of polymerization to form cyano groups and broken pi-conjugation in the bc-CN nanosheets (bc-CN NS) which emit intense blue-violet photoluminescence at 412 nm. The broken pi-conjugated heptazine-ring structure in the bc-CN NS mitigates non-radiation energy loss and promotes the delta*-LP transition. As a result, a high quantum efficiency of 73.1% is achieved. The excellent dispersing ability of the bc-CN NS enables solution-based fabrication of the light emitting diode (LED). The LED exhibits intense electroluminescence of 236 cd m(-2) at 412 nm with an external quantum efficiency of 0.46%. The broken pi-conjugation modulates the optical properties of the polymerized carbon nitride semiconductor giving rise to intense blue-violet electroluminescence, which is very desirable for printable and wide-color-gamut display devices.
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