Abstract:Although extensive reports on the influence of Li/Na/K doping on the physical properties of AlN systems exist, the effects of Li/Na/K doping and point defects (VAl, Hi) coexisting in AlN systems on magneto-optical properties are often neglected. Experimentally, Li/Na/K doping and point defects (VAl, Hi) cannot be precisely controlled. In this study, the generalized gradient approximation (GGA) plane wave ultrasoft pseudopotential + U method based on spin density functional theory is adopted to solve the abovementioned problem. The first-principles method is utilized to study the effects of point defects (VAl, Hi) and Li/Na/K doping on the photocatalytic performance of AlN systems. Compared with the Al34MN36 (M = Li/Na/K) system, the Al34MHiN36 (M = Li/Na/K) system presents reduced formation energy and improved stability. The Al34NaHiN36 system has the smallest formation energy and the highest stability. In particular, compared with all doped systems, the Al34NaHiN36 system has the best absorption spectrum redshift, the best carrier activity, the longest carrier lifetime, and the strongest oxidation capacity, that is, the best photocatalytic performance. The first-principles study indicates that N atoms in all Al34MN36 (M = Li/Na/K) and Al34MHiN36 (M = Li/Na/K) systems have acceptor and donor characteristics. The magnetic source of all doped systems is related to the double exchange of carriers as mediators, the itinerant electron polarization of unpaired N2- atoms and electric polarization. This study has certain theoretical guidance for the experimental design and preparation of new AlN magneto-optical functional materials.

First-principles Study of Point Defects with Different Valences on the Carrier Activity, Lifetime, Absorption Spectrum, and Redox Reaction of AlN (li/na/k) System

Influence of (li/na/k) Doping and Point Defect (val, Hi) on the Magnetic and Photocatalytic Performance of AlN: A First-Principles Study

First-principles study of the effect of alkaline earth metal doping on the magnetic and photocatalytic properties of monolayer AlN: V N -H i

First-principles Study of the Effect of Point Defects (Hi-Val) on the Magnetic and Photocatalytic Properties of Monolayer AlN: Be/Mg/Ca

First-Principles Study of Electronic Structure and Optical Properties of La-Doped AlN

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

Stress and defects cooperatively regulate the photocatalytic performance of AlN bulk phase materials

First Principle Study of the Native Defects in Hexagonal Aluminum Nitride

Complex defects in Al0.5Ga0.5N by first principles calculations

Point Defects in Monolayer h -AlN as Candidates for Single-Photon Emission

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

First‐principles Study of the Al‐N co‐doped Zincblende ZnO

First-principles study of S-doped point defects with different charge states in monolayer g-C3N4

First Principles Study on Band Structure and Optical Properties of N-doped CuAlO2

Cathodoluminescence studies of point defects in aluminum nitride

Electronic properties of graded Ga 1‐x Al x N superlattice nanowires photocathode: First‐principles

The stability, electronic and optical properties of nonmetal doped g-GaN:a first-principles calculation

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Electronic and Structural Properties of N-vacancy in AlN Nanowires:A First-Principles Study