A Dual Post-Treatment Method for Improving the Performance of Ternary NiMgO Semiconductor Interfacial Layers and Their Organic Solar Cells

He Xinrui,Cai Lina,Chen Hansheng,Yin Pan,Yin Zhigang,Zheng Qingdong

DOI: https://doi.org/10.6023/a21120622

2022-01-01

Acta Chimica Sinica

Abstract:Organic solar cells (OSCs) are among the most promising photovoltaic technologies to solve energy and environmental problems. To achieve highly efficient OSCs, controlling over electrode interfacial layers is greatly important for improving charge transportation and collection. Here, ternary metal oxide semiconductor films of Mg-doped NiO (NiMgO) have been prepared via a sol-gel method, and further optimized by several post-treatment strategies. The structures, properties and energy levels of different NiMgO films have been investigated to explore the influence of various post-treatment strategies. Incorporating the ternary NiMgO films as a novel type of hole transport layers (HTLs), non-fullerene OSCs have been fabricated based on a promising bulk-heterojunction of PM6:M36. Their photovoltaic performances and mechanisms of device physics are also investigated. When the sol-gel derived NiMgO film without post-treatment is used as an HTL, the OSCs show a relatively low power conversion efficiency (PCE) of 5.90%. By contrast, after simple ultraviolet-ozone (UVO) post-treatment on the NiMgO HTL, the resulted OSCs exhibit greatly enhanced photovoltaic performances, with an increased open-circuit voltage (V-OC) of 0.87 V and an improved PCE of 12.67%. More importantly, a new dual post-treatment combining surface rinse with UVO treatment has been demonstrated to further optimize NiMgO HTLs and improve device performances. The rinse process can remove excess impurities and flatten the surface of NiMgO films as well as increase the transmittance, while the UVO treatment process is beneficial for reducing surface defects of the ternary oxide films. Benefiting from such an efficient dual post-treatment on NiMgO HTLs, the OSCs afford a high PCE of 13.17% with a retained V-OC of 0.87 V, an increased short-circuit current density of 23.48 mA.cm(-2), and an improved fill factor of 64.29%. These results provide an effective way for surface post-treatment and property optimization of semiconducting metal oxide films, and contribute to the development of high-performance optoelectronic devices.