Abstract:An enhancement-mode <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 metal–oxide–semiconductor field-effect solar-blind phototransistor on Si-doped homoepitaxial film grown by molecular beam epitaxy is demonstrated in this letter. Gate-recess process was employed to fully deplete the Ga 2 O 3 channel to achieve positive threshold voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{{\textsf {th}}}$ </tex-math></inline-formula> (7 V), which broadens the operating range of the solar-blind phototransistor. The dark current of about 0.7 pA is extremely low. Under 254-nm light illumination of 63 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{W}$ </tex-math></inline-formula> /cm 2 , the change of drain current reaches more than 6 orders of magnitude. Record high detectivity of 1.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\times }\,\,10^{{\textsf {16}}}$ </tex-math></inline-formula> Jones and photo-to-dark current ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.1\,\,{\boldsymbol {\times }}\,\,10^{{\textsf {6}}}$ </tex-math></inline-formula> are obtained, respectively. In addition, the rise and decay time are as short as 100 and 30 ms, respectively. High responsivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\,\,\boldsymbol {\times }\,\, 10^{{\textsf {3}}}$ </tex-math></inline-formula> A/W and external quantum efficiency of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.5\,\,\boldsymbol {\times }\,\,10^{{\textsf {6}}}$ </tex-math></inline-formula> % are also achieved with apparent solar-blind photodetection.

A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed.

High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation

Enhancement-Mode <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio

Hysteresis-free Ga2O3 Solar-Blind Phototransistor Modulated from Photoconduction to Photogating Effect

Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga 2 O 3 Heterojunction Channels

High-Detectivity Β-Ga₂o₃ Microflake Solar-Blind Phototransistor for Weak Light Detection

Highly Responsive Silicon-Based Hot-Electron Photodetector with Self-Aligned Metamaterial Interdigital Electrodes

A solar-blind photodetector with ultrahigh rectification ratio and photoresponsivity based on the MoTe2/Ta:β-Ga2O3 pn junction

High Performance Self‐Powered p+‐GaN/n−‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Highly Sensitive and Ultrafast Organic Phototransistor Based on Rubrene Single Crystals.

Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector with Fast Response and High Photo-to-Dark Current Ratio

Highly efficient tunable photodetector with a bipolar response in van der Waals heterojunctions

High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

An ultrasensitive molybdenum-based double-heterojunction phototransistor

High-Detectivity β -Ga2O3 Microflake Solar-Blind Phototransistor for Weak Light Detection

Al plasmon-enhanced diamond solar-blind UV photodetector by coupling of plasmon and excitons

Highly Sensitive Midinfrared Phototransistor

Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio