Abstract:Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe2/MoS2 heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42X10(3) A/W, and ultrahigh specific detectivity of up to 1.39X10(15) cm.Hz(1/2).W 1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43X10(14) cm.Hz(1/2).W-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 105. These results should be attributed to the fact that the vertical HfSe2/MoS2 heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors. Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe2/MoS2 heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42x10(3) A/W, and ultrahigh specific detectivity of up to 1.39x10(15) cm.Hz(1/2).W-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43x10(14) cm.Hz(1/2).W-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10(5). These results should be attributed to the fact that the vertical HfSe2/MoS2 heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.

High-sensitive phototransistor based on vertical HfSe<sub>2</sub>/MoS<sub>2</sub> heterostructure with broad-spectral response

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