Effect of Impurity on the Doping-Induced In-Gap States in a Mott Insulator

Cheng-Ping He,Shun-Li Yu,Tao Xiang,Jian-Xin Li
DOI: https://doi.org/10.1088/0256-307x/39/5/057401
2022-01-01
Abstract:Motivated by the recent measurements of the spatial distribution of single particle excitation states in a hole-doped Mott insulator,we study the effects of impurity on the in-gap states,induced by the doped holes,in the Hubbard model on the square lattice by the cluster perturbation theory.We find that a repulsive impurity potential can move the in-gap state from the lower Hubbard band towards the upper Hubbard band,providing a good account for the experimental observation.The distribution of the spectral function in the momentum space can be used to discriminate the in-gap state induced by doped holes and that by the impurity.The spatial characters of the in-gap states in the presence of two impurities are also discussed and compared to the experiment.
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