Abstract:Electrical and optical properties deterioration of P-GaN films under 150 keV proton irradiation were investigated. Through the Hall measurement method, as the irradiation fluence increasing, the carrier concentration of P-GaN films decreases from 1.23 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{17}}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$-8.24\,\,\times \,\,10^{{16}}$ </tex-math></inline-formula> cm −3 , and the carrier mobility change from 5.64 to 295.84 cm 2 /V/s. And through the circular transmission line model method, the sheet resistance and specific contact resistance for P-GaN films increased first and then decreased slightly under the proton irradiation. Radiation-induced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\mathrm {N}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{Ga}_{\mathrm {i}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\mathrm {Ga}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{N}_{\mathrm {i}}$ </tex-math></inline-formula> were found to be responsible for the degradation of P-GaN films. It was confirmed that P-GaN has been transformed into N-GaN under the fluence of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{15}$ </tex-math></inline-formula> p/cm 2 . The optical properties of the P-GaN films were characterized by examining changes in the photoluminescence spectrum. In addition, the electrical characteristics of Schottky barrier diode (SBD) and p-i-n diodes with the same structure (except for 0.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> P-GaN of p-i-n diode) were used to study the effect of P-GaN degradation on electronic device performance. When P-GaN was transformed into N-GaN, p-i-n diodes lost the electrical characteristics of the p-n junction and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> curves of p-i-n diode are similar to that with SBD.

Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device

Degradation of Electrical Performance and Radiation Damage Mechanism of Cascode GaN HEMT with 80 MeV Proton

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Investigation of Proton Radiation Effect on Indium Gallium Nitride Light Emitting Diodes

Investigation on Electrical Performance Degradation Mechanism of β-Ga2O3 Schottky Barrier Diodes Under 3 MeV Proton Radiation

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Effect of Protons Located at Different Region in SiO2 Layer on GLPNP Transistors Degradation

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Mechanism Analysis of Proton Irradiation-Induced Increase of 3-Db Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication

Geant4 Simulation of Proton Displacement Damage in GaN

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Effects of 300-Mev Proton Irradiation on Electrical Properties of $\Beta$-Ga$_{\text{2}}$otexpreserve2 Schottky Barrier Diodes

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation