High-Frequency Vacuum Electron Devices

Jinjun Feng,Yubin Gong,Chaohai Du,Adrian Cross

DOI: https://doi.org/10.3390/electronics11050817

IF: 2.9

2022-01-01

Electronics

Abstract:Vacuum electron devices at frequencies of millimeter waves and terahertz play highly important roles in the modern high-data rate and broadband communication system, high-resolution detection and imaging, medical diagnostics, magnetically confined nuclear fusion, etc [...]

What problem does this paper attempt to address?

A Review of Microwave Vacuum Devices in China: Theory and Device Development Including High-Power Klystrons, Spaceborne TWTs, and Gyro-TWTs

Jinjun Feng,Y. Gong,Jirun Luo

DOI: https://doi.org/10.1109/MMM.2020.3047747

IF: 3.0619

2021-04-01

IEEE Microwave Magazine

Abstract:Lately, R&D of microwave vacuum electron devices (MVEDs) has played a very important role in the technologies of broadcasting, communication, radar, remote imaging, electronic countermeasures, materials research, deep space exploration, and wave spectroscopy. In the 1970s, this widespread role could not have been predicted, as the development of vacuum electron devices faced a serious challenge from solid-state electron devices. However, in solid-state electron devices, the electron stream is a conduction (ohmic, collisional) current, whereas in vacuum electron devices, the current is a convection (ballistic, collisionless) current. So the vacuum is perfect for high-power devices needing high-power electron currents, especially because vacuum electron devices are intrinsically superior at handling high power or high power density, giving vacuum electronics research an edge in high power and high frequency [1]-[5].

Engineering,Physics
High-speed Optoelectronic Devices

Yi Luo,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Yanjun Han,Hongtao Li,Lai Wang

DOI: https://doi.org/10.1007/s11432-022-3669-5

2023-01-01

Science China Information Sciences

Abstract:High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electro-optic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback (DFB) lasers were fabricated with high single-mode yield. Electroabsorption modulated lasers (EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 × 25 and 4 × 56 Gb/s EML arrays. Both InP and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors (MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.
Ultrafast Electron Tunneling Devices—From Electric‐Field Driven to Optical‐Field Driven

Shenghan Zhou,Ke Chen,Matthew Thomas Cole,Zhenjun Li,Mo Li,Jun Chen,Christoph Lienau,Chi Li,Qing Dai

DOI: https://doi.org/10.1002/adma.202101449

IF: 29.4

2021-07-08

Advanced Materials

Abstract:<p>The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Aligned Carbon Nanotubes/Fibers for Applications in Vacuum Microwave Amplifiers

WI Milne,KBK Teo,E Minoux,O Groening,L Gangloff,L Hudanski,JP Schnell,D Dieumegard,F Peauger,IYY Bu,MS Bell,P Legagneux,G Hasko,GAJ Amaratunga

DOI: https://doi.org/10.1116/1.2161223

2006-01-01

Abstract:Most long-range telecommunication systems are based upon microwave links. The transmitters use microwave amplifiers which in the very near future will be required to work at up to 30–100GHz with output power in the region of a few tens of watts. Carbon nanotubes (CNTs), which exhibit extraordinary field emission properties because of their high electrical conductivity, ideal high aspect ratio whisker-like shape for geometrical field enhancement, and remarkable thermal stability, can be used as the emitter in such applications. This article will describe the plasma enhanced chemical vapor deposition growth of vertically aligned carbon nanotubes, and how well controlled arrays of such structures can be grown. We will also describe how high current densities of ∼1A∕cm2, under direct current and 1.5GHz direct modulation, can be obtained from CNT cathodes. These CNT cold cathodes offer considerable weight and size savings over conventional hot cathodes used in microwave applications (e.g., SATCOM, radar).
Extreme-ultraviolet frequency combs for precision metrology and attosecond science

Ioachim Pupeza,Chuankun Zhang,Maximilian Högner,Jun Ye

DOI: https://doi.org/10.1038/s41566-020-00741-3

IF: 35

2021-01-28

Nature Photonics

Abstract:Femtosecond mode-locked lasers producing visible/infrared frequency combs have steadily advanced our understanding of fundamental processes in nature. For example, optical clocks employ frequency-comb techniques for the most precise measurements of time, permitting the search for minuscule drifts of natural constants. Furthermore, the generation of extreme-ultraviolet attosecond bursts synchronized to the electric field of visible/infrared femtosecond pulses affords real-time measurements of electron dynamics in matter. Cavity-enhanced high-order harmonic generation sources uniquely combine broadband vacuum- and extreme-ultraviolet spectral coverage with multimegahertz pulse repetition rates and coherence properties akin to those of frequency combs. Here we review the coming of age of this technology and its recent applications and prospects, including precision frequency-comb spectroscopy of electronic and potentially nuclear transitions, and low-space-charge attosecond-temporal-resolution photoelectron spectroscopy with nearly 100% temporal detection duty cycle.

optics,physics, applied
Backward Wave Oscillator for High Power Generation at THz Frequencies

Diana Gamzina,Xiang Li,Christian Hurd,Ye Tang,Xuejiao Huang,Yuan Zheng,Logan Himes,Michelle Gonzalez,Hanyan Li,Pan,Rosa Letizia,Jinjun Feng,Neville C. Luhmann,Claudio Paoloni

DOI: https://doi.org/10.1117/12.2273256

2017-01-01

Abstract:The progress in microfabrication techniques and three dimensional electromagnetic simulations have enabled the fabrication of vacuum electron devices up to 1 THz. In particular, the backward wave oscillator is a compact and powerful THz vacuum source, based on the transfer of energy from an electron beam to an electromagnetic (EM) wave propagating in a slow wave structure. The paper reports the design and fabrication challenges to realize a near-THz Backward Wave Oscillator for plasma diagnostics in nuclear fusion. In particular, the beam optics and confinement as well as the slow wave structure are described. Manufacturing as well as device implementation and demonstration considerations are discussed. The double corrugated waveguide is used with a cylindrical electron beam producing an output power on the order of 1 W.
Introduction to the Micro/nano-Fabrication of Modern Vacuum Electronic Devices

Juncong She,Zhizhen Huang,Yifeng Huang,Zhijun Huang,Jun Chen,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2017.8051528

2017-01-01

Abstract:Vacuum micro/nano electronic devices possess merits of radiation hardness, temperature tolerance, high working frequency and output power. It's regarded as the promising candidates for the application on ultra-high speed transistor [1, 2], portable and fast-switch X-ray source [3], free electron laser [4], field emission display [5] and so on. In the developing of modern vacuum electronic, to achieve integrated compact addressable and uniform devices with low driving voltage is one of the important issues. Nowadays, the most studied devices structure is a micro/nano emitter with an integrated control gate, so call “gated” device. The separation between the gate and the cathode is controlled in sub-micro scale, even narrower to nanoscale (<; 100 nm) [2, 6]. The fabrication of vacuum micro/nano electronic devices is based on integrated circuit (IC) compatible techniques, i.e., lithography, etch, and metallization. However, some specific procedures are needed for realizing the uniform integrated gated devices. Among them, the forming of the precisely defined device structures without using aligned-lithography (so call “self-aligned” procedure) is the one that be widely used. This self-aligned technique ensures the localized, precise and large area structure defining. The use of self-aligned process is one of the many innovations that led to the developments of vacuum micro/nano electronics in the past decades.
Investigation of Frequency-Selective Surfaces for a THz Gyromultiplier Output System

Xiang Li,Xiaoming Liu,K. Ronald,W. He,Yang Zeng,Yasir Alfadhl,Robert S. Donnan,A. W. Cross,Xiaodong Chen

DOI: https://doi.org/10.1109/TED.2017.2746718

IF: 3.1

2017-01-01

IEEE Transactions on Electron Devices

Abstract:The recent development of some high-power THz vacuum electronic devices calls for the application of space filters such as frequency-selective surfaces (FSSs) and polarization dividers. This paper presents the comparative study of two types of FSSs for a THz gyromultiplier output system, one with high-pass characteristic while the other one with low-pass functionality. Both FSSs are designed, fabr...
Free-Electron-Driven Frequency Comb

Zi-Wen Zhang,Chao-Hai Du,Juan-Feng Zhu,Fan-Hong Li,Bitao Shen,Xingjun Wang,Pu-Kun Liu

DOI: https://doi.org/10.1002/lpor.202200886

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Free-electron radiations prompt numerous advanced applications such as particle detectors, biological imaging, and light sources from microwave to X-ray. While their polarization, directionality, and phase could be shaped with prosperous metamaterials, their natural broad spectra have not been tailored to yield frequency combs, which are state-of-the-art technology in metrology, spectroscopy, and precision frequency synthesis. Here, the frequency comb directly emitted from the free-electron radiation is demonstrated by simultaneously exciting a series of modes with equidistant spectral lines. Both the offset and repetition frequencies are readily adapted by structural parameters, and relative spectrum intensities between the comb teeth are customizable based on selective coupling, thus permitting flexible tunability over broadband. Moreover, the repetition rate is experimentally verified at the microwave regime. The proposed methodology implies that swift electrons present a natural and versatile platform for generating frequency combs, facilitating the development of metrology and spectroscopy in the terahertz band.
Vacuum-Ultraviolet Photon Detections

Wei Zheng,Lemin Jia,Feng Huang

DOI: https://doi.org/10.1016/j.isci.2020.101145

IF: 5.8

2020-06-26

iScience

Abstract:Vacuum-ultraviolet (VUV) photon detection technology is an effective means for the exploration in the field of space science (monitoring the formation and evolution of solar storms), high-energy physics (dark matter detection), large-scale scientific facility (VUV free electron lasers) and electronic industry (high-resolution lithography). The advancement of this technology mainly depends on the performance optimization of VUV photodetectors. In this review, we introduced the research progress on the typical VUV photodetectors based on scintillator, photomultiplier tube, semiconductor, and gas, with their unique advantages and optimal performance indicators in different applications summarized. In particular, during recent years, thanks to the advances in ultra-wide bandgap semiconductors, economical VUV photodetectors with low power consumption and small size have been encouragingly developed. Finally, we pointed out the remaining challenges for each type of VUV detector, with the aim of maximizing the performance in a variety of applications in the future.
Vacuum Radiation Induced by Time Dependent Electric Field

Bo Zhang,Zhi-meng Zhang,Wei Hong,Shu-kai He,Jian Teng,Yu-qiu Gu

DOI: https://doi.org/10.1016/j.physletb.2017.01.076

IF: 4.95

2017-01-01

Physics Letters B

Abstract:Many predictions of new phenomena given by strong field quantum electrodynamics (SFQED) will be tested on next generation multi-petawatt laser facilities in the near future. These new phenomena are basis to understand physics in extremely strong electromagnetic fields therefore have attracted wide research interest. Here we discuss a new SFQED phenomenon that is named as vacuum radiation. In vacuum radiation, a virtual electron loop obtain energy from time dependent external electric field and radiate an entangled photon pair. Features of vacuum radiation in a locally time dependent electric field including spectrum, characteristic temperature, production rate and power are given.
High-frequency resolution diamond NV center widespectrum imaging technology

Yuan-Yuan Shen,Bo Wang,Dong-Qian Ke,Dou-Dou Zheng,Zhong-Hao Li,Huan-Fei Wen,Hao Guo,Xin Li,Jun Tang,Zong-Min Ma,Yan-Jun Li,Vladimirovich Yaminsky Igor,Jun Liu,Shen Yuan-Yuan,Wang Bo,Ke Dong-Qian,Zheng Dou-Dou,Li Zhong-Hao,Wen Huan-Fei,Guo Hao,Li Xin,Tang Jun,Ma Zong-Min,Igor Vladimirovich Yaminsky,Liu Jun,,,,,,

DOI: https://doi.org/10.7498/aps.73.20231833

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:High-resolution wide-spectrum measurement techniques have significant applications in fields such as astronomy, wireless communication, and medical imaging. The nitrogen-vacancy (NV) center in diamond, known for its high stability, sensitivity, real-time monitoring, single-point detection, and suitability for long-term measurements, has become a prominent choice for spectrum analyzers. Currently, spectrum analyzers based on NV centers as detectors can perform real-time spectrum analysis within the range of several tens of gigahertz, but their frequency resolution is limited to the MHz level. In this study, we constructed a quantum diamond microwave spectrum imaging system combining continuous wave-mixing techniques. Leveraging the spin-related properties of the NV center in diamond, we employed optical pumping by illuminating the diamond NV center with 532 nm green laser light. A spherical magnet was used to apply a magnetic field gradient along one direction of the diamond crystal. By adjusting the size and direction of the magnetic field gradient, spatial encoding of the resonance frequency of the NV center was achieved. The magnetic field gradient induced the Zeeman effect on the diamond surface at different positions, resulting in corresponding ODMR signals. Through precise programming, we coordinated the frequency scanning step of the microwave source with the camera exposure and image storage time, cyclically synchronized according to the sequence for image acquisition. Ultimately, after algorithmic processing, we successfully obtained comprehensive spectrum data within the range of 900 MHz to 6.0 GHz. Within the measurable spectrum range, the system employed continuous wave-mixing, simultaneously applying resonant microwaves and slightly detuned auxiliary microwaves to effectively excite the NV center. This method triggered microwave interference effects, disrupting the balance between laser-induced polarization and microwave-induced spontaneous relaxation. Specifically, microwave interference caused changes in the phase and amplitude of the fluorescence signal, leading to the generation of alternating current fluorescence signals. This further enhanced the response of the NV magnetometer to weak microwave signals. The method enabled the system to achieve a frequency resolution of 1 Hz within the measurable spectrum range, and it could separately measure the frequency resolution of multiple frequency points with a 1 MHz frequency step. The research results indicate that wide-spectrum measurement based on NV centers can achieve sub-hertz frequency resolution, providing robust technical support for future spectrum analysis and applications.

physics, multidisciplinary
Several Fundamental Challenges of Millimeter-to-terahertz Electron Cyclotron Devices

DU Chaohai,LUO Li,LIU Pukun

DOI: https://doi.org/10.13700/j.bh.1001-5965.2015.0231

2015-01-01

Abstract:It is always an important tendency of the electronic power devices to explore and develop electromagnetic radiation sources operating on higher frequency and with higher power capability. The cyclotron electron device which was developed based on the mechanism of the electron cyclotron maser and with the excellent advantage of radiating high power in millimeter-to-terahertz range was introduced. It systematically discussed about the fundamental challenges encountered by the electron cyclotron devices,including the strong ohmic dissipation problem,the mode competition problem,and the unavoidable dependency on operating with strong magnetic field. Finally,it was proposed that,on the basis of fully exploring the physical mechanism of the mode competition,to develop higher order mode circuit and higher harmonic interaction system would be very helpful to realize the high power,high efficiency and high stability cyclotron electron devices,which is of important reference for guiding devices development towards terahertz band.
Microfabrication Technologies for Interaction Circuits of THz Vacuum Electronic Devices

Xinghui Li,Jinjun Feng

DOI: https://doi.org/10.3390/mi15111357

IF: 3.4

2024-11-09

Micromachines

Abstract:Advances in manufacturing technology are allowing for the realization of interaction circuit with microstructures. The capability to produce small circuit structures is allowing new opportunities for vacuum electronic devices producing terahertz (THz) frequency radiation, which is impractical with traditional machining technology. This publication reviews recent progress on advanced microfabrication technologies applicable to interaction circuits of THz vacuum electronic devices, including LIGA/UV-LIGA (Ultraviolet Lithographic, Galvonoformung and Abformung), deep reactive ion etching (DRIE), micro/nano computer numerical control (CNC) milling, three-dimension (3D) printing, etc., and describes the current State-of-the-Art of their applications.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Ultrafast electron diffractometer with Terahertz-driven pulse compression

Dongfang Zhang,Tobias Kroh,Felix Ritzkowsky,Timm Rohwer,Moein Fakhari,Huseyin Cankaya,Anne-Laure Calendron,Nicholas H. Matlis,Franz X. Kärtner

DOI: https://doi.org/10.48550/arXiv.2104.06871

2021-04-14

Abstract:Terahertz (THz)-based electron manipulation has recently been shown to hold tremendous promise as a technology for manipulating and driving the next-generation of compact ultrafast electron sources. Here, we demonstrate an ultrafast electron diffractometer with THz-driven pulse compression. The electron bunches from a conventional DC gun are compressed by a factor of 10 and reach a duration of ~180 fs (FWHM) with 10,000 electrons/pulse at a 1 kHz repetition rate. The resulting ultrafast electron source is used in a proof-of-principle experiment to probe the photoinduced dynamics of single-crystal silicon. The THz-compressed electron beams produce high-quality diffraction patterns and enable observation of the ultrafast structural dynamics with improved time resolution. These results validate the maturity of THz-driven ultrafast electron sources for use in precision applications.

Optics
An ultra-high vacuum system for fabricating clean two-dimensional material devices

Shuaifei Guo,Mingyan Luo,Gang Shi,Ning Tian,Zhe Huang,Fangyuan Yang,Liguo Ma,Nai Zhou Wang,Qinzhen Shi,Kailiang Xu,Zihan Xu,Kenji Watanabe,Takashi Taniguchi,Xian Hui Chen,Dawei Shen,Liyuan Zhang,Wei Ruan,Yuanbo Zhang

DOI: https://doi.org/10.1063/5.0110875

2023-01-01

Abstract:High mobility electron gases confined at material interfaces have been a venue for major discoveries in condensed matter physics. Ultra-high vacuum (UHV) technologies played a key role in creating such high-quality interfaces. The advent of two-dimensional (2D) materials brought new opportunities to explore exotic physics in flat lands. UHV technologies may once again revolutionize research in low dimensions by facilitating the construction of ultra-clean interfaces with a wide variety of 2D materials. Here, we describe the design and operation of a UHV 2D material device fabrication system, in which the entire fabrication process is performed under pressure lower than 5 × 10-10 mbar. Specifically, the UHV system enables the exfoliation of atomically clean 2D materials. Subsequent in situ assembly of van der Waals heterostructures produces high-quality interfaces that are free of contamination. We demonstrate functionalities of this system through exemplary fabrication of various 2D materials and their heterostructures.
Ultra-high-speed Terahertz Imaging Using Atomic Vapour

Lucy A. Downes,Andrew R. MacKellar,Daniel J. Whiting,Cyril Bourgenot,Charles S. Adams,Kevin J. Weatherill

DOI: https://doi.org/10.1103/PhysRevX.10.011027

2019-03-15

Abstract:Terahertz (THz) technologies, generally defined as operating in the 0.1-10THz range, bridge the gap between electronic and photonic devices. Because THz radiation passes readily through materials such as plastics, paper and cloth it can be employed in non-destructive testing, and as it is non-ionising it is considered safe for security and biomedical applications. There is significant demand for high speed THz imaging across a range of applications but, despite ongoing efforts, fast full-field imaging remains an unfulfilled goal. Here we demonstrate a THz imaging system based upon efficient THz-to-optical conversion in atomic vapour, where full-field images can be collected at ultra-high speeds using conventional optical camera technology. For a 0.55 THz field we show an effective 1 cm $^{2}$ sensor with near diffraction-limited spatial resolution and a minimum detectable power of 190 $\pm$ 30 fW s$^{-1/2}$ per 40x40${\mu}$m pixel capable of video capture at 3000 frames per second. This combination of speed and sensitivity represents a step change in the state of the art of THz imaging, and will likely lead to its uptake in wider industrial settings. With further improvements we expect that even higher frame rates of up to 1 MHz would be possible.

Atomic Physics,Instrumentation and Detectors,Optics
Novel Terahertz nanodevices and circuits

c balocco,shahrir r kasjoo,xiaofeng lu,linqing zhang,y alimi,s winnerl,peng bao,yi luo,kin lee,a m song

DOI: https://doi.org/10.1109/ICSICT.2010.5667595

2010-01-01

Abstract:Terahertz (THz) technology has attracted rapidly increasing attention due to a very broad range of potential applications, e.g., medical imaging and homeland security. Perhaps more importantly, developing electronic devices capable of operating at THz frequencies will have great impact on future generation computation and communication. Despite enormous effort in recent years, THz field is still largely unexploited due to the bottleneck issue of the lack of compact, solid-state, room-temperature detectors and emitters. Here we overview our recent work on the THz operations of novel nano-diodes that can detect and emit THz waves at room temperature. Apart from the very high speed, these novel diodes also have characteristics such as zero threshold and quadratic rather than exponential current-voltage response, which are particularly important for applications including THz imaging and energy harvesting. These unique characteristics are possible because the planar nanodevices are based on completely new working principles from conventional diodes, i.e., the rectifying functionality does not rely on any pn junction or tunneling barrier. In our experiments, different antenna structures including spiral, dipole and bow-tie are fabricated to couple the nanodevices to free-space THz waves up to a few THz. Apart from THz imaging and communications, the possibility to extend the technology to mid-infrared frequencies for heat energy harvesting is very attractive because of the potentially high efficiency and low cost as compared with conventional thermoelectric devices.
Femtosecond electron beam probe of ultrafast electronics

Maximilian Mattes,Mikhail Volkov,Peter Baum

2024-01-28

Abstract:The need for ever-faster information processing requires extremely small devices operating at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that surpasses the device under test in speed and spatial resolution and therefore, such a tool cannot be provided by electronics itself. Here we show how ultrafast electron beam probe with terahertz-compressed electron pulses can directly sense local electro-magnetic fields in electronic devices with femtosecond, micrometre and millivolt resolution under normal operation conditions. We analyse the dynamical response of a coplanar waveguide circuit and reveal the impulse response, signal reflections, attenuation and waveguide dispersion directly in the time domain. The demonstrated measurement bandwidth reaches 10 THz and the sensitivity to electric fields is tens of millivolts or -20 dBm. Femtosecond time resolution and the potential to directly integrate our technique into existing electron-beam inspection devices in semiconductor industry makes our femtosecond electron beam probe a promising tool for research and development of next-generation electronics at unprecedented speed and size.

Applied Physics,Other Condensed Matter
An Ultrahigh-Vacuum S-band Photocathode Radio-Frequency Electron Gun

Peng-Wei Huang,Han Chen,Lianmin Zheng,Huaibi Chen,Yingchao Du,Wenhui Huang,Jiaru Shi,Renkai Li,Chuanxiang Tang

DOI: https://doi.org/10.1016/j.nima.2023.168251

IF: 1.335

2023-01-01

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Abstract:High gradient photocathode radio-frequency guns have enabled a broad range of modern accelerator-based scientific instruments. To further enhance the capabilities of these instruments by generating brighter beams, it is highly desirable to the synergies this type of electron sources with advanced photocathodes. However, various photocathodes with low intrinsic emittance and high quantum efficiency require ultrahigh vacuum condition which is far beyond available in existing high-gradient RF guns. Therefore, the physics, performance and feasibility of utilizing these advanced photocathodes under high gradient essentially remain unexplored. In this paper, we report on the concept and comprehensive physical design of a novel S-band photocathode gun that is compatible with advanced photocathodes. The new design features a more than ten-fold improvement in the vacuum level, supported by detailed vacuum modeling. This new gun will enable studies of advanced photocathodes under high acceleration gradient, and eventually be capable of delivering significantly brighter electron beams.

High-Frequency Vacuum Electron Devices

A Review of Microwave Vacuum Devices in China: Theory and Device Development Including High-Power Klystrons, Spaceborne TWTs, and Gyro-TWTs

High-speed Optoelectronic Devices

Ultrafast Electron Tunneling Devices—From Electric‐Field Driven to Optical‐Field Driven

Aligned Carbon Nanotubes/Fibers for Applications in Vacuum Microwave Amplifiers

Extreme-ultraviolet frequency combs for precision metrology and attosecond science

Backward Wave Oscillator for High Power Generation at THz Frequencies

Introduction to the Micro/nano-Fabrication of Modern Vacuum Electronic Devices

Investigation of Frequency-Selective Surfaces for a THz Gyromultiplier Output System

Free-Electron-Driven Frequency Comb

Vacuum-Ultraviolet Photon Detections

Vacuum Radiation Induced by Time Dependent Electric Field

High-frequency resolution diamond NV center widespectrum imaging technology

Several Fundamental Challenges of Millimeter-to-terahertz Electron Cyclotron Devices

Microfabrication Technologies for Interaction Circuits of THz Vacuum Electronic Devices

Ultrafast electron diffractometer with Terahertz-driven pulse compression

An ultra-high vacuum system for fabricating clean two-dimensional material devices

Ultra-high-speed Terahertz Imaging Using Atomic Vapour

Novel Terahertz nanodevices and circuits

Femtosecond electron beam probe of ultrafast electronics

An Ultrahigh-Vacuum S-band Photocathode Radio-Frequency Electron Gun