Growth mechanism and kinetics of Cu 3 Sn in the interfacial reaction between liquid Sn and diversely oriented Cu substrates

Min Shang,Chong Dong,Haoran Ma,Haitao Ma,Yunpeng Wang
DOI: https://doi.org/10.1007/s10854-021-07494-x
2022-01-01
Abstract:In this study, the effects of reflow temperature, reflow time, and substrates (polycrystalline and (001/110/111) monocrystalline Cu substrates) on the growth of Cu 3 Sn at the Cu/Sn3Ag interface were investigated. Results show that the growth of Cu 3 Sn on the interface shows grain boundary diffusion regardless of the orientation of Cu substrates. The formation of Cu 3 Sn is considered as the reaction between Cu atoms and Cu 6 Sn 5 at Cu 6 Sn 5 /Cu 3 Sn interface due to the similar interfacial outline to Cu substrate. In addition, the growth of interfacial Cu 3 Sn is positively correlated with reflow temperature and time. And the preferred plane orientation of Cu substrate has a significant effect on the growth rate of Cu 3 Sn during reflowing. In this experiment, the growth of Cu 3 Sn shows grain boundary diffusion. The growth of Cu 3 Sn on polycrystalline Cu substrate is faster because it has a lot grain boundaries. And the growth rate on (110)Cu single crystals is the fastest among single-crystal Cu substrates because the high surface free energy of single-crystal oriented (110)Cu substrates promotes the growth of Cu 3 Sn and the diffusion distance of Cu atoms is the shortest in this direction.
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