Abstract:Brain-inspired neuromorphic computing systems fueled the emergence of memristor-based artificial synapses, however, conventional silicon-based devices restricted their usage in the wearable field because of their difficulty in bending. To tackle the above challenge, a vertically structured flexible memristor with aluminum-based hydroquinone organic-inorganic hybrid film and Al2O3 as the functional layer, ITO and Pt as the bottom and top electrodes, and PET as the substrate has been developed utilizing molecular/atomic layer deposition to achieve a tradeoff between the resistive transition properties and the flexibility of memristors. The obtained devices combine stable resistive switching behavior and flexibility, showing high switching ratio of 103, better retention (up to 105 s) and endurance properties (up to 104 cycles), and robustness at radius of curvature of 4.5 mm after 104 bending cycles. Furthermore, the presence of multilevel resistive states in these devices ensures that the memristor can emulate synaptic properties such as paired-pulse facilitation, transition from short-term plasticity to long-term plasticity, long-term potentiation and depression, and spike-time-dependent plasticity. The resistive switching mechanism and the role of the bending state on the electrical performance of the device are explored. The fully connected artificial neural network based on the memristor can achieve a recognition accuracy of 90.2% for handwritten digits after training and learning. Flexible memristor will bring feasible advances to the integration of neuromorphic computing and wearable functionality.

Nonvolatile resistive memory and synaptic learning using hybrid flexible memristor based on combustion synthesized Mn-ZnO

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Solution-processable zinc oxide nanorods and a reduced graphene oxide hybrid nanostructure for highly flexible and stable memristor

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

A multilevel resistive switching memristor based on flexible organic-inorganic hybrid film with recognition function

Multilevel resistive switching and synaptic behaviors in MnO-based memristor

Flexible TiO2-WO3−x Hybrid Memristor with Enhanced Linearity and Synaptic Plasticity for Precise Weight Tuning in Neuromorphic Computing

Synaptic Memory Devices from CoO/Nb:SrTiO3 Junction.

Memristor Based on TiOx/Al2O3 Bilayer As Flexible Artificial Synapse for Neuromorphic Electronics

Hf0.5Zr0.5O2-based Ferroelectric Memristor with Multilevel Storage Potential and Artificial Synaptic Plasticity

Synaptic behaviors in flexible Au/WO /Pt/mica memristor for neuromorphic computing system

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity

Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement

A Flexible Resistive Switching Device for Logical Operation Applications in Wearable Systems

In-depth Conduction Mechanism Analysis of Programmable Memristor and Its Biosynaptic Applications

Highly flexible and robust HfO<sub>x</sub>-based memristor for wearable in-memory computing

Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning

A Transient and Biocompatible Biomemristor Integrated with NonVolatile Memory and Artificial Synapse

Transient and Flexible Polymer Memristors Utilizing Full-Solution Processed Polymer Nanocomposites.