Modulation of Exchange Bias in La0.35Sr0.65MnO3/La0.7Sr0.3MnO3 through Volatile Polarization of P(VDF‐TrFE) Gate Dielectric
Xu Wen Zhao,Fai Wong,Yu Kuai Liu,Sheung Mei Ng,Min Gan,Lok Wing Wong,Jiong Zhao,Zongrong Wang,Wang Fai Cheng,Chuanwei Huang,Linfeng Fei,Chee Leung Mak,Chi Wah Leung,Hon Fai Wong
DOI: https://doi.org/10.1002/admi.202300296
IF: 5.4
2023-07-22
Advanced Materials Interfaces
Abstract:By applying low‐voltage pulses on antiferromagnetic La0.35Sr0.65MnO3 layer via polyvinylidene fluoride with trifluoroethylene gate dielectric, oxygen vacancies are introduced into the antiferromagnetic layer, thus modulating the structure and magnetism of the antiferromagnetic layer. This study provides an alternative pathway from conventional strain effect or electrostatic doping effect in ferroelectric field effect transistor to regulate the magnetism of antiferromagnet. Electric‐field regulation of magnetic properties in perovskite manganites has attracted much attention for its potential in spintronics. For antiferromagnetic perovskite manganites, fewer studies are reported due to technological difficulties in probing their magnetic properties. Here, negative exchange bias (EB) is realized in epitaxial antiferromagnetic/ferromagnetic manganite bilayers with atomically flat interfaces. The low‐voltage pulse modulation of EB is demonstrated using the field‐effect device geometry with the ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene as a dielectric gating layer, antiferromagnetic La0.35Sr0.65MnO3 (AF‐LSMO) as pinning layer, and ferromagnetic La0.7Sr0.3MnO3 (FM‐LSMO) as conduction channel. Instead of using non‐volatile polarizations to control the EB, volatile polarizations in ferroelectric field effect transistors are suggested to be capable of modulating the EB. With high‐resolution electron microscopy and spectroscopy, the non‐volatile regulation of EB is attributed to the creation/annihilation of oxygen vacancies in the AF‐LSMO layer via low‐voltage pulses. This study reveals the effect of volatile electric polarizations in ferroelectric field effect devices and highlights the potential for low‐voltage pulse control of the physical properties in antiferromagnetic perovskite oxide insulators.
materials science, multidisciplinary,chemistry