Simultaneous resistance switching and rectifying effects in a single hybrid perovskite
Xuefen Song,Junran Zhang,Yuchi Qian,Zhongjing Xia,Jinlian Chen,Hao Yin,Jing Liu,Linbo Feng,Tianyu Liu,Zihong Zhu,Yuyang Hua,You Liu,Jiaxiao Yuan,Feixiang Ge,Dawei Zhou,Mubai Li,Yang Hang,Fangfang Wang,Tianshi Qin,Lin Wang
DOI: https://doi.org/10.1002/inf2.12562
2024-06-19
InfoMat
Abstract:A perovskite self‐rectifying memristor is realized using (NHCINH3)3PbI5 as the single switching material, which exhibits the record‐low SET power consumption among all single‐material‐based self‐rectifying memristors, and demonstrates the functional application of the movement of halide ions in perovskite and the intermediate layer generated by this process. Halide perovskites with naturally coupled electron‐ion dynamics hold great potential for nonvolatile memory applications. Self‐rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self‐rectifying memristor firstly achieved in a single perovskite (NHCINH3)3PbI5 (abbreviated as (IFA)3PbI5), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)3PbI5 can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n‐type AgI and p‐type (IFA)3PbI5 gives rise to the rectification function like a p–n diode. Such a self‐rectifying memristor exhibits the record‐low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.
materials science, multidisciplinary