Abstract:NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology scaling, and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to (1) fewer electrons in the flash memory cell (floating gate) to represent the data and (2) larger cell-to-cell interference and disturbance effects. Without mitigation, worsening reliability can reduce the lifetime of NAND flash memory. As a result, flash memory controllers in solid-state drives (SSDs) have become much more sophisticated: they incorporate many effective techniques to ensure the correct interpretation of noisy data stored in flash memory cells. In this article, we review recent advances in SSD error characterization, mitigation, and data recovery techniques for reliability and lifetime improvement. We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. Based on the understanding developed by the experimental characterization, we describe several mitigation and recovery techniques, including (1) cell-to-cell interference mitigation, (2) optimal multi-level cell sensing, (3) error correction using state-of-the-art algorithms and methods, and (4) data recovery when error correction fails. We quantify the reliability improvement provided by each of these techniques. Looking forward, we briefly discuss how flash memory and these techniques could evolve into the future.

TCSE: A Target Cell States Elimination Coding Strategy for Highly Reliable Data Storage Based on 3-D NAND Flash Memory

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions

Exploit Asymmetric Error Rates of Cell States to Improve the Performance of Flash Memory Storage Systems

Edge Word-Line Reliability Problem in 3-D NAND Flash Memory: Observations, Analysis, and Solutions

Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory

Data-Aware 3-D TLC NAND flash Memory Reliability Optimization

Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory As Hot-Data Storage

BeLDPC: Bit Errors Aware Adaptive Rate LDPC Codes for 3D TLC NAND Flash Memory.

Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives

PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3D NAND Flash

Realizing Unequal Error Correction for Nand Flash Memory at Minimal Read Latency Overhead

Using Error Modes Aware LDPC to Improve Decoding Performance of 3-D TLC NAND Flash

RBER Aware Multi-Sensing for Improving Read Performance of 3D MLC NAND Flash Memory

Improving the Reliability of MLC NAND Flash Memories Through Adaptive Data Refresh and Error Control Coding

DECC: Differential ECC for Read Performance Optimization on High-Density NAND Flash Memory

Interleaved LDPC Decoding Scheme Improves 3-D TLC NAND Flash Memory System Performance

Data Storage Time Sensitive ECC Schemes for MLC NAND Flash Memories

Asymmetric Error Rates of Cell States Exploration for Performance Improvement on Flash Memory Based Storage Systems

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory