Linear Alignments of Dislocation Loops Near a H 2+ Irradiated Tungsten Grain Boundary: In-Situ TEM Studies and Molecular Dynamics Simulations

Xinyi Liu,Jiechao Cui,Yipeng Li,Guang Ran,Yifan Ding,Xiuyin Huang
DOI: https://doi.org/10.2139/ssrn.3996174
2021-01-01
SSRN Electronic Journal
Abstract:The formation of linear alignments of dislocation loops near a grain boundary (GB) in 30 keV H2+ irradiated tungsten (W) was found for the first time. A lower flux of incident ions tended to retain more H in the TEM foils. The attractions of thin-foil surface would drive H towards the surface, leading to the H supersaturation in the near surface layers and assisting the supersaturated H to cluster as H platelets. Molecular dynamics simulations investigated the interaction between the self-interstitial W atoms (SIAs) and supersaturated H atoms under the influence of GBs. A large number of SIAs tended to aggregate as dislocation loops beside the platelets. The bi-axial stress fields induced by the anisotropic H platelets effectively facilitated the formation of <100> loops. The current investigations not only explain the linear loop alignments, but also provide new insights into the formation mechanism of <100> loops.
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