Bonding Wire Based RF Front-End Tunable Impedance Matching Network for K and Ka Bands

Junyang Chen,Xiangyu Meng,Mo Zhou,Yunjiang Jin
DOI: https://doi.org/10.1109/csrswtc52801.2021.9631582
2021-01-01
Abstract:This paper proposes a novel RF front-end tunable impedance matching network based on 65nm CMOS process, aiming at solving the instability brought by low-cost bonding wire. The pre-simulation shows that the return loss is below -10 dB from 19.8 - 32 GHz, which is suitable for K and Ka bands. Its 1dB bandwidth exceeds 12 GHz and insertion loss is 0.227 dB at the center frequency of 26GHz. Meanwhile, 1dB compression point (IP 1dB ) is higher than 20 dBm.
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