Abstract:Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we demonstrate quantum dot arrays in a silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe), and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make an Ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N + 1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. We put these results into perspective for quantum technology and identify industrial qubits, hybrid technology, automated tuning, and two-dimensional qubit arrays as four key trajectories that, when combined, enable fault-tolerant quantum computation.

Universal control of four singlet–triplet qubits

Universal control of four singlet-triplet qubits

Quantum interference device for controlled two-qubit operations

A four-qubit germanium quantum processor

Universal control of a six-qubit quantum processor in silicon

Controllable Exchange Coupling Between Two Singlet-Triplet Qubits

High-fidelity four-photon GHZ states on chip

Implementing Universal Multi-Qubit Quantum Logic Gates in Three and Four-Spin Systems at Room Temperature

Quantum dot arrays in silicon and germanium

Conditional Rotation of Two Strongly Coupled Semiconductor Charge Qubits

Ultrafast Universal Quantum Control of a Quantum-Dot Charge Qubit Using Landau–Zener–Stückelberg Interference

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits

Bell state generation and CNOT operation using on-demand identical photons from shape-controlled spatially ordered quantum dots

Universal Quantum Computing with Spin and Valley

Universal quantum computation with optical four-component cat qubits

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits

Controlled Quantum Operations of a Semiconductor Three-Qubit System

A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling

Quantum tomography of an entangled three-spin state in silicon

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout