Abstract:Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon-based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate-defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group-IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy-hole-light-hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state-of-the-art in semiconductor quantum computing and suggests avenues for future research. Silicon-based spin quantum bits (qubits) have emerged as a promising platform for large-scale quantum computing due to their compatibility with the semiconductor fabrication technology. This review covers the latest developments of spin qubits in various gate-defined semiconducting nanostructures made of silicon and germanium, and highlights strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points.image

Gate‐Controlled Quantum Dots Based on 2D Materials

2D materials for quantum information science

Recent Advances in Quantum Effects of 2D Materials

Recent Advances in Two-Dimensional Quantum Dots and Their Applications

Recent Progress in Two-Dimensional Inorganic Quantum Dots.

Gate controlled quantum dots in monolayer WSe2

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Recent progress and opportunities in 2D-material quantum dots: synthesis, doping, characterization, and applications

Gate‐Defined Quantum Confinement in CVD 2D WS2 (Adv. Mater. 25/2022)

Controllable Growth of Two-Dimensional Quantum Materials

Chemical insights into two-dimensional quantum materials

Recent progresses of quantum confinement in graphene quantum dots

Single-electron Transport in Graphene-like Nanostructures

Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Quantum photonics with layered 2D materials

Heterostructures of 2D materials-quantum dots (QDs) for optoelectronic devices: challenges and opportunities

Review on the quantum emitters in two-dimensional materials

Spintronics in Two-Dimensional Materials

Stable quantum dots in an InSb two-dimensional electron gas