Abstract:This study revisits the hole injection mechanism in quantum dot light‐emitting diodes. Bias voltage effectively reduces the energy barrier between the hole transport layer (HTL) and the quantum dots (QDs) and forms a triangular potential barrier at the HTL/QDs interface, allowing holes to be injected from the HTL to the QDs through thermally assisted tunneling. Injecting holes from the hole transport layer (HTL) into the quantum dot (QD) emitting layer in quantum dot light‐emitting diodes (QLEDs) is considered challenging due to the presence of a relatively high hole injection barrier at the HTL/QD interface. However, QLEDs with exceptional brightness and efficiency are achieved, prompting a reevaluation of the traditional hole injection mechanisms. This study examines the hole injection mechanism in QLEDs using a combination of experiments and simulations. The results demonstrate that the applied bias significantly reduces the barrier height between the highest occupied molecular orbital level of the HTL and the valence band (VB) of the QDs, facilitating hole injection. The bending of the lowest unoccupied molecular orbital energy level of the HTL at the HTL/QD interface confines electrons within the QD, effectively minimizing leakage current. Additionally, the triangle‐shaped potential barrier arising from the bending of the VB energy level of the QDs creates favorable conditions for hole–tunneling injection. Moreover, both simulations and experiments consistently demonstrate that the predominant pathway for hole injection from the HTL to the QDs in the QLED device involved thermally assisted tunneling. This study is important to understand the hole injection mechanism in QLEDs.

Electronic and Excitonic Processes in Quantum Dot Light-Emitting Diodes

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Deciphering exciton-generation processes in quantum-dot electroluminescence

Exploring Electronic and Excitonic Processes Toward Efficient Deep-Red CuInS2/ZnS Quantum-Dot Light-Emitting Diodes.

Exploring the Emission Mechanism of Dichromatic White-Light Quantum-Dot Light-Emitting Diodes Using Wavelength-Resolved Transient Electroluminescence Analysis.

Diagnosing the Charge Dynamic Behaviors in Quantum-Dot Light-Emitting Diodes by Temperature-Dependent Measurements

Influence of shells on the charge tunnelling behaviour in quantum-dot light-emitting diodes

The influence of Auger recombination on the performance of quantum-dot light-emitting diodes

Quantum-dot Light-Emitting Diodes with Fermi-level Pinning at the Hole-Injection/hole-transporting Interfaces

Revisiting Hole Injection in Quantum Dot Light‐Emitting Diodes

A Review on the Electroluminescence Properties of Quantum-Dot Light-Emitting Diodes

Towards the Design of Efficient Quantum Dot Light-Emitting Diodes by Controlling the Exciton Lifetime

Quantum Mechanical Modeling of Nanoscale Light Emitting Diodes

Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

The Work Mechanism and Sub-Bandgap-Voltage Electroluminescence in Inverted Quantum Dot Light-Emitting Diodes

Multinary Cu─In─Zn─S‐based Quantum‐Dot Electroluminescence and Implications on Device Designs

Enhanced performances of quantum dot light-emitting diodes with doped emitting layers by manipulating the charge carrier balance

Elucidating the Impact of Electron Accumulation in Quantum-Dot Light-Emitting Diodes

On the Electroluminescence Turn‐On Mechanism of Blue Quantum‐Dot Light‐Emitting Diodes

Preparation of Efficient Quantum Dot Light-Emitting Diodes by Balancing Charge Injection and Sensitizing Emitting Layer with Phosphorescent Dye