Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

The Work Mechanism and Sub-Bandgap-Voltage Electroluminescence in Inverted Quantum Dot Light-Emitting Diodes

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Quantum-dot Light-Emitting Diodes with Fermi-level Pinning at the Hole-Injection/hole-transporting Interfaces

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

Sub-Bandgap-Voltage Electroluminescence of Light-Emitting Diodes

In-Well Ionization from Monolayer Quantum Dots for Non-Carrier-Injection Electroluminescence

White light-emitting quantum dot diodes and tuning of luminescence processes

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Deciphering exciton-generation processes in quantum-dot electroluminescence

Enhanced performances of quantum dot light-emitting diodes with doped emitting layers by manipulating the charge carrier balance

High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure

Thermal assisted up-conversion electroluminescence in quantum dot light emitting diodes

Quantum Mechanical Modeling of Nanoscale Light Emitting Diodes