Effect of low-temperature rapid annealing on structural and electrical properties of electroless platinum contacts on CdZnTe detectors
Shulei Wang,Xiangzhi Cao,Chen Xie,Jijun Zhang,Xiaoyan Liang,Linjun Wang,Zheren Xu,Xiaolong Song,Panhui Qiu
DOI: https://doi.org/10.1016/j.mssp.2022.106930
IF: 4.1
2022-11-01
Materials Science in Semiconductor Processing
Abstract:In this work, platinum (Pt) electrodes were deposited on CdZnTe wafers by electroless H2PtCl4 solution and subsequently annealed at different temperature from 323 K to 473 K. Focused ion beam (FIB) imaging, transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), current-voltage (I–V) analysis and energy spectra under 241Am irradiation were adopted to investigate the effect of low-temperature rapid annealing on interface structure, electrical and carrier transport properties of Pt/CdZnTe samples. Single-crystal PtTe layer with [100] orientation and thickness of 20 nm was found in the interface between electroless Pt and CdZnTe wafer. The leakage current of the Pt/CdZnTe detectors at 200 V decreased from 212 nA cm−2 to 101 nA cm−2 after low-temperature rapid annealing, due to a decrease of voltage drop across the PtTe interface layer. The energy spectra and carrier transport performance of Pt/CdZnTe detectors suggested that the optimal annealing temperature was 423 K. The energy spectra of Pt/CdZnTe detector under 241Am showed that the FWHM was improved from 23.3% to 14.4%, while the full charge collection and mobility lifetime product of electrons increasing from 611 to 625 and 3.17 × 10−3 to 3.76 × 10−3 cm2 V−1 s−1, respectively.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied