Artificial Vision Adaption Mimicked by an Optoelectrical In2O3 Transistor Array.

Chenxing Jin,Wanrong Liu,Yunchao Xu,Yulong Huang,Yiling Nie,Xiaofang Shi,Gengming Zhang,Pei He,Jian Zhang,Hongtao Cao,Jia Sun,Junliang Yang
DOI: https://doi.org/10.1021/acs.nanolett.2c00599
IF: 10.8
2022-01-01
Nano Letters
Abstract:Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.
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