Robust Half-Metallic Spin-Gap in Co2CrAl: Doping and Strain Engineering

A. Islam,M. Zulfiqar,S. Nazir,Jun Ni
DOI: https://doi.org/10.1088/1402-4896/ac4dcf
2022-01-01
Physica Scripta
Abstract:Half-metallic ferromagnetic (HM FM) materials with sizeable HM-gap have grabbed a lot of attention as they provide high spin-filtering and reduce the spin-flipping, which are necessary parameters for the manufacturing of magnetic memory devices. Herein, the effect of 3d transition metals (TM = Ti, V, Mn, and Fe) doping at Cr site on the electronic and magnetic properties of full-Heusler Co2CrAl compound is investigated utilizing ab-initio calculations. The negative formation energies for all doped systems confirm their structural stability at ambient pressure. Our results revealed that undoped and all the TM-doped systems exhibit a stable HM FM state. The Cr d yz and d3z2−r2 orbitals are mainly responsible for conductivity in the spin-majority channel with a small contribution from d xy / dx2−y2 states in each case. It is also found the admixture of t 2g and e g characteristics of TM ions in the spin-magnetization density iso-surfaces, where magnetism is discussed by analyzing the electronic spin state configurations. Moreover, it is found that half-metallicity in all systems is robust and can be preserved by the compression/elongation of the unit cell volume up to 10%. Finally, the Bader charge analysis exhibits that all the motifs contain a mixture of covalent and ionic characteristics. Hence, the present work suggests that 3d TM-doped Co2CrAl structures are of great interest for the development of extremely capable data storage devices.
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