Spin Dependent Tunneling and Strain Sensitivity in Co 2 MnSb/HfIrSb Magnetic Tunneling Junction: A First-Principles Study
Joydipto Bhattacharya,Ashima Rawat,Ranjit Pati,Aparna Chakrabarti,Ravi Pandey
DOI: https://doi.org/10.1039/d4cp01850h
IF: 3.3
2024-09-26
Physical Chemistry Chemical Physics
Abstract:Half-metallic Co-based full Heusler alloys have recently captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this comprehensive study, employing density functional theory , we delve into the electronic stability and ballistic spin transport properties of a magnetic tunneling junction (MTJ) comprising a Co2MnSb/HfIrSb interface. In-depth investigation of k-dependent spin transmissions uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. It has been found that Co-terminated Co2MnSb/HfIrSb interface shows perpendicular magnetic anisotropy, while those with Mn-Sb and Mn-Mn termination exhibit in-plane magnetic anisotropy. Further, our spin-dependent transmission calculations demonstrate that the Mn-Mn/Ir interface manifests strain-sensitive transmission properties under both compressive and tensile strain, and yields a remarkable three-fold increase in majority spin transmission under tensile strain conditions. We find a tunnel magnetoresistance 500% under bi-axial strain of -3%, beyond which the tunnel resistance is found to be theoretically infinite. These compelling outcomes place the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale spintronic devices, emphasizing the potential significance of the system in advancement of the field.
chemistry, physical,physics, atomic, molecular & chemical