Insight into Effects of Disordered Sulfur on the Electronic Band Structure of S-hyperdoped Silicon

Jiamin Xiao,Zhen Zhu,Jun Zhuang

DOI: https://doi.org/10.1364/pv.2015.jtu5a.15

2015-01-01

Abstract:We employ supercells to investigate the electronic structure of hyperdoped silicon with periodic S and random distribution of S, respectively and reveal disordering of impurities on the band structure of hyperdoped silicon cannot be ignored.

What problem does this paper attempt to address?

Superconductivity and Disorder Effect in TlNi2Se2−xSxcompounds

Hangdong Wang,Qianhui Mao,Huimin Chen,Qiping Su,Chiheng Dong,Rajwali Khan,Jinhu Yang,Bin Chen,Minghu Fang

DOI: https://doi.org/10.1088/0953-8984/27/39/395701

2015-01-01

Journal of Physics Condensed Matter

Abstract:After our first discovery of multi-band superconductivity (SC) in the TlNi2Se2 crystal, we successfully grew a series of TlNi2Se(2-x)S(x) (0.0 ≤ x ≤ 2.0) single crystals. Measurements of resistivity, specific heat, and susceptibility were carried out on these crystals. Superconductivity with T(C) = 2.3 K was first observed in the TlNi2S2 crystal, which also appears to involve heavy electrons with an effective mass m* = 13-25 m(b), as inferred from the normal state electronic specific heat and the upper critical field, H(C2)(T). It was found that bulk SC and heavy-electron behavior is preserved in all the studied TlNi2Se(2-x)S(x) samples. In the mixed state, a novel change of the field dependence of the residual specific heat coefficient, γ(N)(H), occurs in TlNi2Se(2-x)S(x) with increasing S content. We also found that the T(C) value changes with the disorder degree induced by the partial substitution of S for Se, characterized by the residual resistivity ratio (RRR). Thus, the TlNi2Se(2-x)S(x) system provides a platform to study the effect of disorder on the multi-band SC.
Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Wu Lan,Yuxin Sun,Tong Zhao,Deren Yang,Xiangyang Ma

DOI: https://doi.org/10.1007/s12633-019-00240-3

IF: 3.4

2019-01-01

Silicon

Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.
Understanding disorder in 2D materials: the case of carbon doping of Silicene

Ricardo Pablo-Pedro,Miguel Angel Magana-Fuentes,Marcelo Videa,Jing Kong,Mingda Li,Jose L. Mendoza-Cortes,Troy Van Voorhis

DOI: https://doi.org/10.1021/acs.nanolett.0c01775

2020-08-16

Abstract:We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).

Materials Science
Hybrid functional studies on impurity-concentration-controlled band engineering of chalcogen-hyperdoped silicon

Hezhu Shao,Cong Liang,Zhen Zhu,BoYuan Ning,Xiao Dong,Xijing Ning,Li Zhao,Jun Zhuang

DOI: https://doi.org/10.7567/APEX.6.085801

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:We employ the hybrid functional method to study the impurity-concentration-controlled band engineering of chalcogen-hyperdoped silicon. The variations of defect band width and distance to the conduction band with increasing impurity concentration are given, in which at very low concentration, the reasonable depths of defect states and the energy gap compared with the experiments indicate the good accuracy of hybrid functional calculations for the band structures. For S- and Se-doped silicon, the critical concentrations for the merging of defect and conduction bands are obtained. At the key concentrations related to the insulator-to-metal transition, the characteristics of band structures are discussed. (C) 2013 The Japan Society of Applied Physics
Influence of disorder on superconductivity in the Si(111)- 7× 3-In surface

Yanfu Wu,Gang Yao,Yueqiao Qu,Xutao Wang,Ningning Liu,Ming-Chao Duan,Dan-Dan Guan,Shiyong Wang,Hao Zheng,Yao-Yi Li,Canhua Liu,Jin-Feng Jia

DOI: https://doi.org/10.1063/5.0025151

IF: 4

2020-10-26

Applied Physics Letters

Abstract:To uncover the critical effect of disorder on superconductivity, the ideal method is to visualize the microscopic crystalline deficiencies in real space while measuring the macroscopic superconducting properties. By using a self-developed multifunctional scanning tunneling microscope, we investigated the correlation between controllably introduced disorder and superconductivity in the Si(111)-<span class="equationTd inline-formula"><math> 7</math></span>×<span class="equationTd inline-formula"><math> 3</math></span>-In surface reconstruction. It is revealed that not only the density but also the spatial distribution of surface vacancies makes a significant influence on the diamagnetic response of the superconducting surface reconstruction. The higher density of vacancies uniformly dispersed on terraces results in a lower critical temperature and critical magnetic field, while the presence of grooves formed by aggregation of vacancies at step edges reduces the critical supercurrent and thus weakens the diamagnetic shielding effect remarkably.

physics, applied
Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Hezhu Shao,Yuan Li,Jinhu Zhang,Bo-Yuan Ning,Wenxian Zhang,Xi-Jing Ning,Li Zhao,Jun Zhuang

DOI: https://doi.org/10.1209/0295-5075/99/46005

2012-01-01

Europhysics Letters

Abstract:A series of fundamental properties from atomic geometry, electronic band structure, optical absorption, to dynamics are systemically studied for the silicon doped with supersaturated chalcogens (S, Se, and Te). The atomic structures in a broad energy range are obtained and distinguished as three classes named the substitutional, interstitial, and quasi-substitutional. Their relative energies varying with the S, Se, and Te samples reveal that the concentration of impurity atoms occupying the substitutional position, which plays an important role in optical absorption, will be different and get progressively higher from S-, Se-, to Te-hyperdoped silicon. Electronic band structures show that for the most atomic geometries the defect-related states do appear into the gap of silicon, and the optical absorption calculations clarify that they are the very origin of the broadband absorption of chalcogen-hyperdoped silicon. Combining the optical absorption properties with the structural transformation from molecular-dynamics simulations, we disclose the micromechanism of annealing-induced reduction of infrared absorptance. Furthermore, we conclude that both the different concentrations of the substitutional doping and structural transformation will lead to the different annealing-induced reduction of infrared absorptance for S-, Se-, and Te-hyperdoped silicon as observed in experiments.
Correlated Shallow Impurity Bands in Doped Semiconductors

AQ LU,ZQ ZHANG,KA CHAO,JL ZHU

DOI: https://doi.org/10.1103/physrevb.31.8087

1985-01-01

Abstract:The electron-correlation effect has been incorporated to the disorder model of Matsubara and Toyozawa to study the shallow impurity states in doped semiconductors. A detailed Green's-function analysis reveals the split-impurity-subband structure as a consequence of the electron correlation, in agreement with the result of computer simulations. The impurity conductivity has been investigated with an application to phosphorus-doped silicon.
Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Ke-Fan Wang,Mingguo Liu,Yaping Ma,Zhenxiang Cheng,Yuanxu Wang,Xudong Xiao

DOI: https://doi.org/10.48550/arXiv.1611.05208

2016-11-16

Materials Science

Abstract:Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of the energetically metastable states for an interstitial sulfur atom inside crystalline silicon. Finally, we obtain sixty-three metastable interstitial states and they can be classified into ten types. Interestingly, twenty-eight (44% in total) of lower-energy metastable states can produce a well-isolated and half-filled intermediate band (IB) inside silicon forbidden gap, which makes sulfur hyperdoped silicon to be a desirable material for IB solar cells.
Electronic states and curved surface effect of silicon quantum dots

Wei-Qi Huang,Zhong-Mei Huang,Han-Qiong Cheng,Xin-Jian Miao,Qin Shu,Shi-Rong Liu,Chao-Jian Qin

DOI: https://doi.org/10.1063/1.4761945

IF: 4

2012-10-22

Applied Physics Letters

Abstract:The calculation results show that the bonding energy and electronic states of silicon quantum dots (Si QDs) are different on various curved surfaces (CS), for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. Curved surface breaks symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in band gap. The red-shifting of photoluminescence spectra on smaller silicon quantum dots can be explained by CS effect. In CS effect, surface curvature is determined by the shape of Si QDs or silicon nanostructures, which is independent of their sizes. The CS effect has the interesting fundamental physical properties in nanophysics as that of quantum confinement effect.

physics, applied
Disordered Hyperuniformity in Two-Dimensional Amorphous Silica

Yu Zheng,Lei Liu,Hanqing Nan,Zhen-Xiong Shen,Ge Zhang,Duyu Chen,Lixin He,Wenxiang Xu,Mohan Chen,Yang Jiao,Houlong Zhuang

DOI: https://doi.org/10.1126/sciadv.aba0826

IF: 13.6

2020-01-01

Science Advances

Abstract:Disordered hyperuniformity (DHU) is a recently proposed new state of matter, which has been observed in a variety of classical and quantum many-body systems. DHU systems are characterized by vanishing infinite-wavelength normalized density fluctuations and are endowed with unique novel physical properties. Here, we report the discovery of disordered hyperuniformity in atomic-scale two-dimensional materials, i.e., amorphous silica composed of a single layer of atoms, based on spectral-density analysis of high-resolution transmission electron microscopy images. Moreover, we show via large-scale density functional theory calculations that DHU leads to almost complete closure of the electronic bandgap compared to the crystalline counterpart, making the material effectively a metal. This is in contrast to the conventional wisdom that disorder generally diminishes electronic transport and is due to the unique electron wave localization induced by the topological defects in the DHU state.
Disorder in interacting quasi-one-dimensional systems: flat and dispersive bands

Mi-Ji Liang,Yong-Feng Yang,Chen Cheng,Rubem Mondaini

DOI: https://doi.org/10.1103/PhysRevB.108.035131

2023-07-21

Abstract:We investigate the superconductor-insulator transition (SIT) in disordered quasi-one dimensional systems using the density-matrix renormalization group method. Focusing on the case of an interacting spinful Hamiltonian at quarter-filling, we contrast the differences arising in the SIT when the parent non-interacting model features either flat or dispersive bands. Furthermore, by comparing disorder distributions that preserve or not SU(2)-symmetry, we unveil the critical disorder amplitude that triggers insulating behavior. While scaling analysis suggests the transition to be of a Berezinskii-Kosterlitz-Thouless type for all models (two lattices and two disorder types), only in the flat-band model with Zeeman-like disorder the critical disorder is nonvanishing. In this sense, the flat-band structure does strengthen superconductivity. For both flat and dispersive band models, i) in the presence of SU(2)-symmetric random chemical potentials, the disorder-induced transition is from superconductor to insulator of singlet pairs; ii) for the Zeeman-type disorder, the transition is from superconductor to insulator of unpaired fermions. In all cases, our numerical results suggest no intermediate disorder-driven metallic phase.

Strongly Correlated Electrons,Disordered Systems and Neural Networks,Superconductivity
Disorder effects on quantum transport and quantum phase transition in low-dimensional superconducting and topological systems

Haijiao Ji,Haiwen Liu,Hua Jiang,X. C. Xie

DOI: https://doi.org/10.1080/23746149.2021.1884133

2021-01-01

Abstract:Disorder effects inevitably exist in realistic samples, manifesting in various physical properties. In this paper, we review the recent progress in understanding the disorder effects on quantum transport and quantum phase transition properties in low-dimensional superconducting and topological systems. As a consequence of the pronounced quantum fluctuation in low-dimensional systems, rare events drastically change the physical characteristics and underlying microscopic transport process in these systems, which are beyond the traditional paradigms. Associating with recent experimental observations, we emphasize the microscopic mechanism for disordered Ising superconductivity, the quantum Griffiths singularity of superconductor metal transition and the discrete scale invariance in topological materials.
Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

J. Klein,A. Kerelsky,M. Lorke,M. Florian,F. Sigger,J. Kiemle,M. C. Reuter,T. Taniguchi,K. Watanabe,J. J. Finley,A. Pasupathy,A. W. Holleitner,F. M. Ross,U. Wurstbauer

DOI: https://doi.org/10.48550/arXiv.1905.01242

2019-05-04

Abstract:Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background doping with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high doping density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems.

Materials Science
Insulator-to-metal transition in sulfur-doped silicon

Mark T. Winkler,Daniel Recht,Meng-Ju Sher,Aurore J. Said,Eric Mazur,Michael J. Aziz

DOI: https://doi.org/10.1103/PhysRevLett.106.178701

2011-03-03

Abstract:We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.

Materials Science
ELECTRONIC-STRUCTURE IN ONE-DIMENSIONAL INCOMMENSURATELY MODULATED CHAINS WITH DISORDER

SJ XIONG,MQ TANG

DOI: https://doi.org/10.7498/aps.36.1230

IF: 0.906

1988-01-01

Acta Physica Sinica

Abstract:The influence of the substitution disorder and the period disorder on electronic structures of one-dimensional, nearly periodic systems is studied in terms of numerical method. The results show that the Cantor set structure of electronic spectra in the almost periodic systems is destroyed in both the disordered cases, but Ihe former may -create new impurity levels in the forbidden band, and the latter mainly broadens the original energy bands.
Effects of disorder on the optical properties of the (Zn,Mg)(S,Se) quaternary alloy

Antonino Marco Saitta,Stefano de Gironcoli,Stefano Baroni

DOI: https://doi.org/10.48550/arXiv.cond-mat/9811306

1998-11-20

Materials Science

Abstract:The electronic and optical properties of (Zn,Mg)(S,Se) wide-gap solid solutions are studied using ab initio techniques and starting from the previously determined atomistic structure of the alloy. Compositional disorder is shown to close substantially the gap with respect to the predictions of the virtual-crystal approximation. The bowing of the fundamental gap vs. composition predicted by our calculations is in very good agreement with experiments available for the Zn(S,Se) pseudo-binary alloy. At temperatures typical for MBE growth, the quaternary alloy displays a rather large amount of short-range order whose effect is to slightly but unmistakably open the gap. Our results agree well with recent experimental data for the quaternary alloy.
Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Mao Wang,A. Debernardi,Wenxu Zhang,Chi Xu,Ye Yuan,Yufang Xie,Y. Berencén,S. Prucnal,M. Helm,Shengqiang Zhou

DOI: https://doi.org/10.1103/physrevb.102.085204

IF: 3.7

2020-08-25

Physical Review B

Abstract:Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-band-gap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power-law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2–50 K. These results show that the electron wave function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.

physics, condensed matter, applied,materials science, multidisciplinary
The Effect of Sulfur on the Electrical Properties of S and N Co-Doped ZnO Thin Films: Experiment and First-Principles Calculations

Wenzhe Niu,Hongbin Xu,Yanmin Guo,Yaguang Li,Zhizhen Ye,Liping Zhu

DOI: https://doi.org/10.1039/c5cp02434j

2015-01-01

Abstract:P-type sulphur-nitrogen (S-N) co-doped ZnO thin films are deposited and the effect of sulphur on the electrical properties is discussed. First-principles calculations indicate that the structure is most stable when the S atom is close to the N atom in the (0002) plane, implying that dual-doped ZnO is relatively feasible to approach. The partial density of states of S-N co-doped ZnO shows that the S impurity plays a vital role in forming the p-type conductivity.
First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Lele Cai,Shanshan Wang,Menglin Huang,Yu-Ning Wu,Shiyou Chen

DOI: https://doi.org/10.1088/1361-6463/abff7d

2021-01-01

Abstract:Studies of the deep energy levels and nonradiative carrier capture induced by sulfur doping in silicon were initiated 60 years ago; however, the defect configurations, their deep energy levels, and the carrier capture cross sections are still not well understood. In this study, we focus on SSi substitution, and perform a first-principles study of its defect configurations and the deep energy levels using hybrid exchange-correlation functional. We discover a new distortive configuration for SSi + besides the previously obtained structure with higher symmetry. For both SSi + configurations, the deep transition levels ε (0/+) and ε (+/2+) are determined as 0.35 eV and 0.68 eV below the conduction band minimum, respectively. As a benchmark calculation, the hole-capture cross sections for neutral and +1 charged states are obtained based on the distortive structure. The cross section for SSi + agrees with the experiment, demonstrating the multi-phonon process for SSi + capturing a hole, whereas the cross section of SSi 0 is significantly lower than the experimental data because hole capture by SSi 0 is an Auger-type process. Our calculations provide a benchmark for the evaluation of the cross section of carrier capture in semiconductors using multi-phonon nonradiative recombination theory.
Anomalous Quantum Oscillations and Evidence for a Non-Trivial Berry Phase in SmSb

Fan Wu,Chunyu Guo,Michael Smidman,Jinglei Zhang,Ye Chen,John Singleton,Huiqiu Yuan

DOI: https://doi.org/10.1038/s41535-019-0161-4

IF: 6.856

2019-01-01

npj Quantum Materials

Abstract:Topologically non-trivial electronic structures can give rise to a range of unusual physical phenomena, and the interplay of band topology with other effects such as electronic correlations and magnetism requires further exploration. The rare earth monopnictides X(Sb,Bi) (X = lanthanide) are a large family of semimetals where these different effects may be tuned by the substitution of rare-earth elements. Here we observe anomalous behavior in the quantum oscillations of one member of this family, antiferromagnetic SmSb. The analysis of Shubnikov-de Haas (SdH) oscillations provides evidence for a non-zero Berry phase, indicating a non-trivial topology of the α-band. Furthermore, striking differences are found between the temperature dependence of the amplitudes of de Haas-van Alphen effect oscillations, which are well fitted by the Lifshitz-Kosevich (LK) formula across the measured temperature range, and those from SdH measurements which show a significant disagreement with LK behavior at low temperatures. Our findings of unusual quantum oscillations in an antiferromagnetic, mixed valence semimetal with a possible non-trivial band topology can provide an opportunity for studying the interplay between topology, electronic correlations and magnetism.

Insight into Effects of Disordered Sulfur on the Electronic Band Structure of S-hyperdoped Silicon

Superconductivity and Disorder Effect in TlNi2Se2−xSxcompounds

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Understanding disorder in 2D materials: the case of carbon doping of Silicene

Hybrid functional studies on impurity-concentration-controlled band engineering of chalcogen-hyperdoped silicon

Influence of disorder on superconductivity in the Si(111)- 7× 3-In surface

Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Correlated Shallow Impurity Bands in Doped Semiconductors

Half-filled intermediate bands Si material formed by energetically metastable interstitial sulfur atom

Electronic states and curved surface effect of silicon quantum dots

Disordered Hyperuniformity in Two-Dimensional Amorphous Silica

Disorder in interacting quasi-one-dimensional systems: flat and dispersive bands

Disorder effects on quantum transport and quantum phase transition in low-dimensional superconducting and topological systems

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Insulator-to-metal transition in sulfur-doped silicon

ELECTRONIC-STRUCTURE IN ONE-DIMENSIONAL INCOMMENSURATELY MODULATED CHAINS WITH DISORDER

Effects of disorder on the optical properties of the (Zn,Mg)(S,Se) quaternary alloy

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

The Effect of Sulfur on the Electrical Properties of S and N Co-Doped ZnO Thin Films: Experiment and First-Principles Calculations

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Anomalous Quantum Oscillations and Evidence for a Non-Trivial Berry Phase in SmSb