Flexible Ultraviolet—Visible Photodetector Based on HfS3 Nanobelt Film.

Yourong Tao,Jin-Qiang Chen,Jia-Jing Wu,Yi Wu,Xingcai Wu

DOI: https://doi.org/10.1002/chin.201609005

2016-01-01

ChemInform

Abstract:The title nanobelts are synthesized by chemical vapor transport reaction of Hf and S powders (quartz tube, 650 °C, temperature gradient about 10 K/cm, 5 h).

What problem does this paper attempt to address?

Flexible ultraviolet–visible photodetector based on HfS 3 nanobelt film

yourong tao,jinqiang chen,jiajing wu,yi wu,xingcai wu

DOI: https://doi.org/10.1016/j.jallcom.2015.10.184

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:HfS3 nanobelts with a width of 700 − 70 nm, a thickness of about 10–30 nm and a length of more than 10 μm, were directly synthesized at 650 °C for 5 h by a facile chemical vapor transport (CVT) method. The direct and indirect optical energy gaps of the nanobelts were measured as 2.19 and 1.73 eV, respectively. The nanobelts have good photoluminescence (PL), i. e. there are strong emissions at 483, 540 and 600 nm under excitation at 400 nm. The nanobelts were dispersed in enthanol and adhered to a transparent polypropylene (PP) film by double-side adhesive tape, and then two separate electrodes (Ti/Au) were evaporated on the surface with a mask, removing the mask to form a flexible photodetector. The detector demonstrated an excellent photoresponse from ultraviolet to visible light. Under illumination of 405 nm with 6.32 mW, the light on/off current ratio is 12, and response time is less than 0.2 s. It suggested that the HfS3 nanobelts are promising for applications in optoelectronic nanodevices, and the flexible photodetector can be used in practical photodetection.
Individual HfS3 nanobelt for field-effect transistor and high performance visible-light detector

weiwei xiong,jinqiang chen,xingcai wu,junjie zhu

DOI: https://doi.org/10.1039/c4tc01039f

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:HfS3 nanobelts were directly synthesized via a simple chemical vapor transport method. A field-effect transistor and photodetector was further fabricated based on an individual HfS3 nanobelt, and its electrical and optoelectronic properties were evaluated. The output characteristic curves of the FET revealed a typical p-type semiconducting behavior. The photodetector has an ultralow dark current (0.04 pA) and a large on/off ratio (337.5) illuminated by 405 nm light with 1.2 mW cm(-2). It demonstrated excellent stability and sensitivity to 405 nm light. The results suggest that the HfS3 nanobelts are promising for application in nanoscale electronic and optoelectronic devices. The research will play a positive role in nanodevice research of one-dimensional transition-metal trichalcogenide nanostructure.
Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors.

Muhammad Zubair Nawaz,Liu Xu,Xin Zhou,Muhammad Javed,Jiale Wang,Binhe Wu,Chunrui Wang

DOI: https://doi.org/10.1021/acsami.2c22219

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Despite numerous studies on broadband photodetectors, the problematic query that remains unaddressed is the limited photoresponsivity while broadening the spectral regime. Here, for the first time, a rational design of a hybrid 1D CdSe nanobelt/2D PbI2 flake heterojunction device is constructed, which substantially boosts the photocurrent while significantly attenuating the dark current, resulting in improved photodetector figures-of-merit. Thanks to the excellent quality of the nanobelt/flake and built-in electric field at the CdSe/PbI2 interface heterojunction, photogenerated carriers are promptly segregated and more photoexcitons are accumulated by the respective electrodes, enabling a high responsivity of ∼106 A/W, making this one of the highest values among similar reported hybrid heterojunction photodetectors, together with a large linear dynamic range, superior sensitivity, excellent detectivity and external quantum efficiency, an ultrafast response, and a broadband spectral response range. The similar 1D/2D hybrid heterojunction device architecture assembled on the flexible polyimide tape substrate exhibits excellent folding endurance and mechanical, flexural, and long-term environmental stability. The present device architecture and robust operational stability in an ambient environment reveals that the combination of the present 1D/2D hybrid heterojunction has incredible potential for future flexible photoelectronic devices.
Visible Light Detectors Based on Individual ZrSe3 and HfSe3 Nanobelts

Wei-Wei Xiong,Jin-Qiang Chen,Xing-Cai Wu,Jun-Jie Zhu

DOI: https://doi.org/10.1039/c4tc02492c

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Zinc triselenide (ZrSe3) and hafnium triselenide (HfSe3) nanobelts were synthesized using a chemical vapor transport method. Photodetectors based on individual nanobelts of ZrSe3 and HfSe3 were fabricated on SiO2/Si substrates, respectively, and the optoelectronic properties of both were evaluated. The ZrSe3 nanobelt photodetector showed a good photoresponse to wavelengths ranging from 405 nm to 780 nm. Under illumination with 650 nm light, the ratio of photoswitch currents reached 1.97 with a light on/off period of 50 s at a bias voltage of 5 V. The HfSe3 nanobelt photodetector also showed good photoresponse to wavelengths ranging from 405 nm to 650 nm, and the ratio of photoswitch currents, under illumination with 532 nm light, reached 2.2 with a light on/off period of 50 s at a bias voltage of 5 V. The photoresponse time of both the photodetectors was less than 0.4 s. The results demonstrated that ZrSe3 and HfSe3 nanobelts possessed excellent photoconductivity, and suggested that these photodetectors would have potential applications under a range of visible light conditions.
HfSe 3 nanobelts

Wei-Wei Xiong,Jin-Qiang Chen,Xing-Cai Wu,Jun-Jie Zhu

2015-01-01

Abstract:Zinc triselenide (ZrSe3) and hafnium triselenide (HfSe3) nanobelts were synthesized using a chemical vapor transport method. Photodetectors based on individual nanobelts of ZrSe3 and HfSe3 were fabricated on SiO2/Si substrates, respectively, and the optoelectronic properties of both were evaluated. The ZrSe3 nanobelt photodetector showed a good photoresponse to wavelengths ranging from 405 nm to 780 nm. Under illumination with 650 nm light, the ratio of photoswitch currents reached 1.97 with a light on/ off period of 50 s at a bias voltage of 5 V. The HfSe3 nanobelt photodetector also showed good photoresponse to wavelengths ranging from 405 nm to 650 nm, and the ratio of photoswitch currents, under illumination with 532 nm light, reached 2.2 with a light on/off period of 50 s at a bias voltage of 5 V. The photoresponse time of both the photodetectors was less than 0.4 s. The results demonstrated that ZrSe3 and HfSe3 nanobelts possessed excellent photoconductivity, and suggested that these photodetectors would have potential applications under a range of visible light conditions.
Sb2o3 Nanobelt Networks for Excellent Visible-Light-Range Photodetectors

L. Li,Y. X. Zhang,X. S. Fang,T. Y. Zhai,M. Y. Liao,H. Q. Wang,G. H. Li,Y. Koide,Y. Bando,D. Golberg

DOI: https://doi.org/10.1088/0957-4484/22/16/165704

IF: 3.5

2011-01-01

Nanotechnology

Abstract:Excellent photoconductive properties have been found in Sb2O3 nanobelts synthesized by a surfactant-assisted solvothermal method. Visible-light photodetectors have been designed from Sb2O3 nanobelt networks using micrometer-wide gold wires as masks. Photodetectors show high sensitivity to visible light, high stability, and reproducibility. Fast response and decay times (< 0.3 s) are comparable or even better than these parameters in many other metal oxide nanoscale photodetectors. The dominant mechanism of excellent photoconductivity is attributed to the barrier height modulations in the nanobelt-to-nanobelt contact regions. These results demonstrate that Sb2O3 nanobelt networks can indeed serve as high-performance photodetectors in the visible light range.
Flexible Visible-Light Photodetectors with Broad Photoresponse Based on Zrs3 Nanobelt Films

You-Rong Tao,Xing-Cai Wu,Wei-Wei Xiong

DOI: https://doi.org/10.1002/smll.201401376

IF: 13.3

2014-01-01

Small

Abstract:Two new flexible visible-light photodetectors based on ZrS3 nanobelts films are fabricated on a polypropylene (PP) film and printing paper, respectively, by an adhesive-tape transfer method, and their light-induced electric properties are investigated in detail. The devices demonstrate a remarkable response to 405 to 780 nm light, a photocurrent that depends on the optical power and light wavelength, and an excellent photoswitching effect and stability. This implies that ZrS3 nanobelts are prospective candidates for high-performance nanoscale optoelectronic devices that may be practically applied in photodetection of visible to near infrared light. The facile fabrication method is extendable to flexible nanodevices with different nanostructures.
Hfx3(X = Se and S)/Graphene Composites for Flexible Photodetectors from Visible to Near-Infrared

Lei Fan,Yourong Tao,Xingcai Wu,Zhongyu Wu,Jiajing Wu

DOI: https://doi.org/10.1016/j.materresbull.2017.03.058

IF: 5.6

2017-01-01

Materials Research Bulletin

Abstract:Flexible photodetectors from 405 to 980 nm based on HfSe3 or HfS3 nanobelts (NBs)/graphene composites were fabricated on polypropylene (PP) films. Compared with HfSe3 or HfS3 NB photodetectors, the flexible composite photodetector showed enhancement of photoresponsivity. For substance, under the illumination light of 405 nm (14.4 mW/cm(2)), the responsivities of HfSe3 NBs, HfSe3 NBs/GO (graphene oxide) and HfSe3 NBs/RGO (reduced graphene oxide) photodetectors were 1.1 x 10-4, 4.3 x 10(-3) and 0.5 (mA/W), respectively, while those of HfS3 NBs, HfS3 NBs/GO and HfS3 NBs/RGO photodetectors were 0.11, 0.92 and 0.55 (mA/W), respectively. Meanwhile, these photodetectors exhibited excellent durability and stability after they were placed for 3 months and bended 500 times. So the composites are promising optoelectronic materials, and the flexible photodetectors are highperformance photodetectors from visible to near-infrared. (C) 2017 Elsevier Ltd. All rights reserved.
Single-crystalline ZnS nanobelts with sharp ultraviolet (UV) emission at room temperature as UV-light sensors

xiaosheng fang,yoshio bando,meiyong liao,ujjal k gautam,tianyou zhai,dmitri golberg

DOI: https://doi.org/10.1109/INEC.2010.5424959

2010-01-01

Abstract:We have demonstrated an effective approach for the synthesis of single-crystalline ZnS nanobelts possessing sharp UV emission at RT via right selection of source materials and controlling their evaporation and agglomeration rates. Individual ZnS nanobelt-based UV-light sensors were fabricated, these showed a high potential as visible-blind UV photodetectors and ultra-fast optoelectronic switches. The sensor characteristics, including a spectral response, I-V curves under various light illuminations, and a time response were studied. The photoresponsivity of an individual ZnS nanobelt-based UV sensor exhibited over three orders of magnitude gain under the UV light illumination as compared to a visible light. The high spectral selectivity combined with high photosensitivity and fast time response (< 0.3 s) make the present single-crystalline ZnS nanobelts particularly valuable for new Â¿visible-blindÂ¿ UV photodetectors, especially in the UV-A region.
Synergetic Enhancement in Photosensitivity and Flexibility of Photodetectors Based on Hybrid Nanobelt Network

Muhammad Shahid,Yuting Wang,Jun Yang,Tianjun Li,Jing Cheng,Mengfei Zhang,Yan Xing,Chunlei Wan,Wei Pan

DOI: https://doi.org/10.1002/admi.201700909

IF: 5.4

2017-01-01

Advanced Materials Interfaces

Abstract:High photosensitivity, transparency, flexibility, and facile assembly are the main important features of photodetectors, which extend their use for vast range of applications. In this study, a highly stable transparent flexible ultraviolet-visible (UV-vis) hybrid photodetectors, with enhanced photosensitivity and fast photoresponse speed (on/off switching) based on In2O3-ZnO hybrid nanobelts, is reported. A highly enhanced photosensitivity of about 4.7 x 10(5), fast photoresponse, and at the same time extended spectral range (UV to vis) have been achieved in these hybrid flexible photodetectors as compared to their pure counterparts In2O3 and ZnO. Furthermore, these photodetectors have shown excellent photoresponsivity of 18.5 A W-1 with an external quantum efficiency 7.4 x 10(3)% and a high detectivity of 1.7 x 10(12) Jones under the excitation wavelength of 308 nm. A facile, tunable, and cost-effective method has been employed to assemble these photodetectors by using well-aligned electrospun nanobelts. The prepared UV-vis photodetectors have shown a high transparency >90% under visible light (400-700 nm) which demonstrates their applications in fully light exposure required devices. These transparent electrospun nanobelts with high aspect ratios can also be transferred to multiple substrates, which shows their applications in different environment as a freestanding nanobelt network for UV-vis photodetectors.
Flexible Photodetector From Ultraviolet To Near Infrared Based On A Sns2 Nanosheet Microsphere Film

yourong tao,xingcai wu,wei wang,j wang

DOI: https://doi.org/10.1039/c4tc02325k

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:A new flexible ultraviolet (UV) to near infrared (NIR) photodetector based on a SnS2 nanosheet self-assembled microsphere film has been fabricated onto a transparent polypropylene (PP) film using double-side adhesive tape, and its light-induced electric properties were investigated in detail. The detector demonstrates a remarkable photoresponse from 300 to 830 nm, a remarkable photocurrent depending on the optical power and light wavelength, as well as an excellent photoswitch effect and stability. In addition, another new rigid photodetector based on the same SnS2 microsphere film has been fabricated on a SiO2/Si substrate, showing similar photosensitive properties. It suggests that SnS2 nanosheet microspheres are potential candidates for high-performance nanoscale optoelectronic devices, and the SnS2-microsphere-based photodetector can be applied as a photodetector in the range of UV to NIR light because of its low cost and nontoxicity.
Lead-free perovskite/ZnO heterostructure for flexible visible-blind ultraviolet photodetection

Xinhong Zhao,Jinyu Dai,Jixiang Dong,Yu Tao,Jiahuan Chen,Xiaoxian Song,Zhendong Fu,Wenbao Sun,Zaoxue Yan

DOI: https://doi.org/10.1063/5.0210954

IF: 4

2024-06-17

Applied Physics Letters

Abstract:With the increasing demand for wearable, portable, and implantable optoelectronic devices, flexible photodetectors have become the hotspots of scientific pursuit. In this work, a flexible heterostructure photodetector was fabricated through a combination of perovskite CsCu2I3 nanorods and ZnO quantum dots by a facile solution method. The heterostructure combines the good bending resistance, low dark current, and excellent photoelectric conversion efficiency of CsCu2I3 nanorods with the high electron mobility of ZnO quantum dots; CsCu2I3 NRs act as the light compensating material and hole collector, while ZnO serves as an electron transport channel. This combination results in stronger UV absorption and reduced influence of visible light, achieving ultraviolet-to-visible rejection ratios of as high as 8 × 102. The photodetector exhibits superior performance in the visible-blind ultraviolet region, boasting an on–off ratio of 102, a tenfold increase compared to single-component CsCu2I3 NR photodetectors. Its responsivity and specific detectivity, at 1.62 A/W and 4.13 × 1011 Jones, respectively, outperform the single-component CsCu2I3 NRs by 40 and 23 times and surpass the single-component ZnO photodetectors by 102 times. The response time is about 50% shorter than that of the single-component CsCu2I3 and ZnO photodetectors. This photodetector also shows excellent flexibility and environmental and mechanical stability after a series of sharp bends. The results indicate that the CsCu2I3/ZnO heterostructure provides a promising alternative for high-performance flexible UV optoelectronics.

physics, applied
Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

He Tian,Chao Fan,Gangzha Liu,Shuo Yuan,Yonghui Zhang,Mengjun Wang,Erping Li

DOI: https://doi.org/10.1016/j.apsusc.2019.05.175

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:As one of the few two dimensional intrinsic p-type semiconductor materials, fin (II) sulfide (SnS) has gradually emerged in the field of layered metal chalcogenides (LMCs) and has attracted enormous attention due to its superior properties, such as high absorption and low power consumption. In this work, SnS is obtained by a simple, effective and low-cost hydrothermal synthesis route. The morphology, phase structure and chemical composition of the obtained SnS are characterized. The results show that the as-synthesized SnS has a belt-like structure with high purity and crystallinity. The belt length and width are similar to 15 mu m and similar to 5 mu m, respectively. Photodetectors based on such SnS are fabricated, and the photoresponse characteristics are also explored. The photodetectors show excellent and ultrafast photoresponse performance in a broad spectral range in the visible and near-infrared regions. The rise and decay time under illumination at the near-infrared wavelength of 850 nm laser are short as 1.1 ms and 1.3 ms, respectively. The ultrafast photoresponse performance makes SnS a promising candidate for Vis-NIR photodetectors.
UV Photodetectors: Single‐Crystalline ZnS Nanobelts As Ultraviolet‐Light Sensors (adv. Mater. 20/2009)

Xiaosheng Fang,Yoshio Bandô,Meiyong Liao,Ujjal K. Gautam,Chunyi Zhi,Benjamin Dierre,Baodan Liu,Tianrui Zhai,Takashi Sekiguchi,Yasuo Koide,Dmitri Golberg

DOI: https://doi.org/10.1002/adma.200990072

IF: 29.4

2009-01-01

Advanced Materials

Abstract:Xiaosheng Fang and and co-workers demonstrate on p. 2034 that single-crystalline ZnS nanobelts that display sharp UV emission (∼ 337 nm) at room temperature can be assembled into UV sensors that are highly selective and display ultrafast response to radiation stimuli. Such sensors would prove extremely useful for the detection of harmful near-visible-wavelength UV radiation, of particular interest in locations where the shielding effect of the Earth's atmosphere is deteriorating.
Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection

Jiafu Ye,Ke Liao,Xun Ge,Zhen Wang,Yang Wang,Meng Peng,Ting He,Peisong Wu,Hailu Wang,Yunfeng Chen,Zhuangzhuang Cui,Yue Gu,Hangyu Xu,Tengfei Xu,Qing Li,Xiaohao Zhou,Man Luo,Ning Li,Muhammad Zubair,Feng Wu,Peng Wang,Chongxin Shan,Gang Wang,Jinshui Miao,Weida Hu

DOI: https://doi.org/10.1002/adom.202002248

IF: 9

2021-01-01

Advanced Optical Materials

Abstract:Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition-metal dichalcogenides (TMDs) is limited to the visible (Vis) to near-infrared (NIR) due to large intrinsic bandgaps (approximate to 1.2-2 eV). Here, a bandgap engineering of HfS2 by a tellurium (Te)-replacement strategy is obtained via chemical vapor transport method. The bandgap values of HfS2(1-x)Te2x decrease from 1.7 to 0.88 eV with Te composition changing from 0 to 0.095. Few-layer HfS1.81Te0.19 based field-effect transistors exhibit a high current on/off ratio of 10(6) and decent electron mobility of 12.6 cm(2) V-1 s(-1) at room temperature. The photodetectors show a responsivity of 2 A W-1 with a remarkable photocurrent of approximate to 3 mu A and a fast response speed of 8.8/75 ms at 830 nm simultaneously. Further, the response spectrum of HfS2(1-x)Te2x based photodetectors is broadened from Vis to short-wavelength infrared (SWIR), covering the free-space laser communications wavelength and the second NIR region in medicine. Bandgap engineering of 2D TMDs proposed in this work offer a promising route to develop bandgap-variable 2D materials for infrared photodetection applications.
New Ultraviolet Photodetector Based On Individual Nb2o5 Nanobelts

Xiaosheng Fang,Linfeng Hu,Kaifu Huo,Biao Gao,Lijuan Zhao,Meiyong Liao,Paul K. Chu,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1002/adfm.201100743

IF: 19

2011-01-01

Advanced Functional Materials

Abstract:Although human eyes are quite insensitive to ultraviolet (UV) light, most of the longer wavelength UV light (the UV-A band between 320 and 400 nm) does reach the earth surface and after prolonged exposure, the radiation can cause health concerns especially skin cancer. Therefore, it is extremely important to explore ways to effectively monitor the radiation. Herein we report for the first time a new high-performance UV photodetector made of an individual Nb2O5 nanobelt. Quasi-aligned Nb2O5 nanobelts 100-500 nm wide and 2-10 mu m long were synthesized using a hydrothermal treatment of a niobium foil in a KOH solution followed by proton exchange and calcination treatment. A nanostructured photodetector was constructed from an individual Nb2O5 nanobelt and its optoelectronic properties were evaluated. The detector exhibited linear photocurrent characteristics, excellent light selectivity, and high external quantum-efficiency (EQE) of 6070%. Long-term stability of the photocurrent over a period of 2500 s at an applied voltage of 1.0 V was achieved. The photodetector performance was further enhanced by improving the crystallinity and eliminating the defects in the Nb2O5 nanobelt crystals. These excellent optoelectronic properties demonstrate that Nb2O5 nanobelts are suitable for visible-blind UV-light sensors and optoelectronic circuits, especially those operating in the UV-A range.
Transparent and Flexible Selenium Nanobelt-Based Visible Light Photodetector

Lin-Bao Luo,Xiao-Bao Yang,Feng-Xia Liang,Jian-Sheng Jie,Qiang Li,Zhi-Feng Zhu,Chun-Yan Wu,Yong-Qiang Yu,Li Wang

DOI: https://doi.org/10.1039/c2ce06420k

IF: 3.756

2012-01-01

CrystEngComm

Abstract:We report a synthesis of single-crystal [001] oriented selenium nanobelts (SeNBs) through a simple vacuum evaporation at 250 degrees C. The width and thickness of the SeNBs are in the range of 100-800 nm and 20-90 nm, respectively. I-V analysis of an individual SeNB based field effect transistor (FET) reveals typical p-type electrical conduction. The hole mobility and concentration are respectively estimated to 0.63 cm(2) (V s)(-1) and 9.35 x 10(16) cm(-3). The p-type electrical characteristics can be explained by the surface termination model, according to which, H- or OH- termination can induce a defect level slightly above the valance band maximum (VBM). A fully transparent and flexible visible light photodetector assembled on a polyethylene terephthalate (PET) substrate shows a high sensitivity to visible light illumination, with sensitivity and conductive gain as high as 3.27 x 10(4) A W-1 and 6.77 x 10(4) respectively. Furthermore, the device also exhibits a stable performance and good reproducibility under different bending conditions. The high-performance visible light photodetector would enable application opportunities in future flexible and transparent electronics.
Bendable Photodetector on Fibers Wrapped with Flexible Ultrathin Single Crystalline Silicon Nanomembranes.

Enming Song,Qinglei Guo,Gaoshan Huang,Bo Jia,Yongfeng Mei

DOI: https://doi.org/10.1021/acsami.7b02123

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Silicon (Si) nanomembranes (NMs) enable conformal covering on complicated surfaces for novel applications. We adopt classical fibers as flexible/curved substrates and wrap them with freestanding ultrathin Si-NMs with a thickness of ∼20 nm. Intrinsic defects in single-crystalline Si-NMs provide a flow path for hydrofluoric acid (HF) to release the NM with a consecutive area of ∼0.25 cm2. Such Si-NMs with ultralow flexural rigidities are transferred onto a single-mode fiber (SMF) and functionalized into bendable photodetectors, which detects the leaked light when the fiber is bent. Our demonstration exemplifies optoelectronic applications in flexible photodetector for Si-NMs in a three-dimensional (3D) geometry.
Ultrabroadband, Fast, and Flexible Photodetector Based on HfTe5Crystal

Yingying Niu,Yingxin Wang,Weidong Wu,Pengfei Wang,Jialin Sun,Jianguo Wen,Xiaowei Lu,Peng Jiang,Sijie Zhang,Nanlin Wang,Dong Wu,Ziran Zhao

DOI: https://doi.org/10.1002/adom.202000833

IF: 9

2020-01-01

Advanced Optical Materials

Abstract:Ultrabroad spectrum detection has a wide range of photonic and optoelectronic applications, such as spectroscopy, optical communication, imaging, and sensing. 3D topological insulator candidates are promising materials for fast high‐performance photodetectors owing to their linear dispersion band structure and high carrier mobility. In this study, an ultrabroadband photothermoelectric (PTE) self‐powered detector based on the topological insulator candidate HfTe5 is reported for the first time. The photosensitive properties are characterized in an ultrabroadband range from the ultraviolet (375 nm) to terahertz (118.8 µm) wavelengths, and the responsivities at all examined wavelengths are found to be greater than 1 V W−1 at room temperature. Owing to the Dirac band dispersion of HfTe5, the response time (τ) of the proposed detector is as short as ≈1 ms, which is 1–3 orders of magnitude faster than that of recently reported PTE detectors based on millimeter‐scale graphene, 3D graphene, EuBiSe3 single crystal, and SrTiO3 crystal. Furthermore, the sensitivity of the HfTe5 detector to the light intensity and direction of linearly‐polarized light is demonstrated. Thus, the proposed device demonstrates outstanding flexibility, air stability, and long‐term photostability as well, displaying high potential for practical applications in wearable optoelectronics.
An Efficient Way to Assemble ZnS Nanobelts As Ultraviolet‐Light Sensors with Enhanced Photocurrent and Stability

Xiaosheng Fang,Yoshio Bando,Meiyong Liao,Tianyou Zhai,Ujjal K. Gautam,Liang Li,Yasuo Koide,Dmitri Golberg

DOI: https://doi.org/10.1002/adfm.200901878

IF: 19

2010-01-01

Advanced Functional Materials

Abstract:Although there has been significant progress in the fabrication and performance optimization of one-dimensional nanostructure-based photodetectors, it is still a challenge to develop an effective and low-cost device with high performance characteristics, such as a high photocurrent/dark-current ratio, photocurrent stability, and fast time response. Herein an efficient and low-cost method to achieve high-performance 'visible-blind' microscale ZnS nanobelt-based ultraviolet (UV)-light sensors without using a lithography technique, by increasing the nanobelt surface areas exposed to light, is reported. The devices exhibit about 750 times enhancement of a photocurrent compared with individual nanobelt-based sensors and an ultrafast time response. The photocurrent stability and time response to UV-light do not change significantly when a channel distance is altered from 2 to 100 mu m or the sensor environment changes from air to vacuum and different measurement temperatures (60 and 150 degrees C). The photoelectrical behaviors can be recovered well after returning the measurement conditions to air and room temperature again. The low cost and high performance of the resultant ZnS nanobelt photodetectors guarantee their highest potential for visible-blind UV-light sensors working in the UV-A band.

Flexible Ultraviolet—Visible Photodetector Based on HfS3 Nanobelt Film.

Flexible ultraviolet–visible photodetector based on HfS 3 nanobelt film

Individual HfS3 nanobelt for field-effect transistor and high performance visible-light detector

Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors.

Visible Light Detectors Based on Individual ZrSe3 and HfSe3 Nanobelts

HfSe 3 nanobelts

Sb2o3 Nanobelt Networks for Excellent Visible-Light-Range Photodetectors

Flexible Visible-Light Photodetectors with Broad Photoresponse Based on Zrs3 Nanobelt Films

Hfx3(X = Se and S)/Graphene Composites for Flexible Photodetectors from Visible to Near-Infrared

Single-crystalline ZnS nanobelts with sharp ultraviolet (UV) emission at room temperature as UV-light sensors

Synergetic Enhancement in Photosensitivity and Flexibility of Photodetectors Based on Hybrid Nanobelt Network

Flexible Photodetector From Ultraviolet To Near Infrared Based On A Sns2 Nanosheet Microsphere Film

Lead-free perovskite/ZnO heterostructure for flexible visible-blind ultraviolet photodetection

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

UV Photodetectors: Single‐Crystalline ZnS Nanobelts As Ultraviolet‐Light Sensors (adv. Mater. 20/2009)

Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection

New Ultraviolet Photodetector Based On Individual Nb2o5 Nanobelts

Transparent and Flexible Selenium Nanobelt-Based Visible Light Photodetector

Bendable Photodetector on Fibers Wrapped with Flexible Ultrathin Single Crystalline Silicon Nanomembranes.

Ultrabroadband, Fast, and Flexible Photodetector Based on HfTe5Crystal

An Efficient Way to Assemble ZnS Nanobelts As Ultraviolet‐Light Sensors with Enhanced Photocurrent and Stability