Abstract:Photodetectors are widely employed in research and innovation, necessitating swift response times, precision, and stability. However, their application in commercial and industrial settings is hindered by limited flexibility and a constrained capacity to respond across a broad spectrum. In this study, we adopted a facile, cost-effective, and room temperature Successive Ionic Layer Adsorption and Reaction (SILAR) technique to craft thin films of Cobalt-doped ZnS on a flexible paper substrate. The Cobalt doping, with varying wt.% (0, 0.5, 1, and 1.5) exhibiting excellent responsivity to both UV and visible spectra. Zinc Sulfide (ZnS), renowned for its wide bandgap, serves as a versatile semiconductor, making it an ideal candidate for photodetectors. The introduction of Cobalt broadened the responsivity of ZnS, covering a wide spectrum, including UV and visible regions. Structural confirmation of the material was achieved through XRD and Raman analyses. Scanning Electron Microscopy revealed the aggregated spherical nanostructure of ZnS on the cellulose substrate. Verification of Cobalt presence in the ZnS thin film and assessment of elemental oxidation states were conducted using XPS. Temporal response and I–V characteristics of the device were evaluated under varying light conditions, specifically at wavelengths of 325 nm and 700 nm at different intensities. Responsivity calculations yielded values of 22.5 mA/W for UV illumination (light intensity 0.6 mW/cm 2 ) and 37.6 mA/W (light intensity 0.4 mW/cm 2 ) for visible light, with corresponding response times recorded as 1.45 s and 2.13 s, respectively. In addition to performance assessments, bending cycle studies were conducted, demonstrating the excellent flexibility of the device up to 800 cycles. The Cobalt-doped ZnS device, as fabricated, emerges as a promising material for energy harvesting.

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