Abstract:Quantitative understanding of 2D atomic layer interface thermal resistance (R) based on Raman characterization is significantly hindered by unknown sample-to-sample optical properties variation, interface-induced optical interference, off-normal laser irradiation, and large thermal-Raman calibration uncertainties. In this work, we develop a novel energy transport state resolved Raman (ET-Raman) to resolve these critical issues, and also consider the hot carrier diffusion, which is crucial but has been rarely considered during interface energy transport study. In ET-Raman, by constructing two steady heat conduction states with different laser spot sizes, we differentiate the effect of R and hot carrier diffusion coefficient (D). By constructing an extreme state of zero/negligible heat conduction using a picosecond laser, we differentiate the effect of R and materials specific heat. In the end, we precisely determine R and D without need of laser absorption and temperature rise of the 2D atomic layer. Seven MoS2 samples (6.617.4 nm) on c-Si are characterized using ET-Raman. Their D is measured in the order of 1.0 cm(2)/s, increasing against the MoS2 thickness. This is attributed to the weaker in-plane electronphonon interaction in thicker samples, enhanced screening of long-range disorder, and improved charge impurities mitigation. R is determined as 1.221.87 X 10(7) K.m(2)/W, decreasing with the MoS2 thickness. This is explained by the interface spacing variation due to thermal expansion mismatch between MoS2 and Si, and increased stiffness of thicker MoS2. The local interface spacing is uncovered by comparing the theoretical Raman intensity and experimental data, and is correlated with the observed R variation.

Disentangling Charge Transfer, Heat Conduction, and Strain Effects at WS2/Graphene Interface

Disentangling Light‐Induced Charge Transfer, Heating, and Strain Effects in WS2/Graphene Heterostructures

Disentanglement Of Heat And Carrier Transfer Effects In Ws2/Graphene Heterostructure Under Near-Infrared Laser Excitation

Disentanglement of Heat and Carrier Transfer Effects in WS<inf>2</inf>/Graphene Heterostructure under Near-Infrared Laser Excitation

Extreme Thermal Insulation and Tradeoff of Thermal Transport Mechanisms Between Graphene and WS2 Monolayers.

Thermal Conductance Between Water and Nm-Thick WS2: Extremely Localized Probing Using Nanosecond Energy Transport State-Resolved Raman

Thermal Transfer in Graphene-Interfaced Materials: Contact Resistance and Interface Engineering.

Interface Thermal Conductance and Rectification in Hybrid Graphene/silicene Monolayer

Interfacial Thermal Resistance and Thermal Rectification Between Suspended and Encased Single Layer Graphene

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature

Corrugated Epitaxial Graphene/sic Interfaces: Photon Excitation and Probing.

Phonon heat conduction across slippery interfaces in twisted graphite

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at the Interface of Graphene/WS2 Heterostructures at Room Temperature

Unraveling the Mechanisms of Thermal Boundary Conductance at the Graphene-Silicon Interface: Insights from Ballistic, Diffusive, and Localized Phonon Transport Regimes

Disentangling Electronic and Phononic Thermal Transport Across 2D Interfaces

Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at the Interface of Graphene/WS 2 Heterostructures at Room Temperature

Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS2

Charge transfer at carbon nanotube-graphene van der Waals heterojunctions.

Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures

Design Of Phosphorene/Graphene Heterojunctions For High And Tunable Interfacial Thermal Conductance

Optical Separation of Mechanical Strain from Charge Doping in Graphene