Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Corrugated Epitaxial Graphene/sic Interfaces: Photon Excitation and Probing.

Five orders of magnitude reduction in energy coupling across corrugated graphene/substrate interfaces.

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Measuring Near-Field Radiative Heat Transfer in a Graphene- <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math> Heterostructure

Epitaxial graphene on SiC(0001): More than just honeycombs

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Thermal conductance at the graphene-SiO2 interface measured by optical pump-probe spectroscopy

Thermal Transfer in Graphene-Interfaced Materials: Contact Resistance and Interface Engineering.

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Electronic control of heat flow across graphene interfaces

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Raman spectroscopy of epitaxial graphene on a SiC substrate

Heat dissipation at a graphene-substrate interface.

Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

Interfacial Thermal Resistance and Thermal Rectification Between Suspended and Encased Single Layer Graphene

Disentangling Charge Transfer, Heat Conduction, and Strain Effects at WS2/Graphene Interface

Nano-Objects Developing at Graphene/Silicon Carbide Interface

Interfacial Thermal Resistance Across Graphene/Al2o3 and Graphene/Metal Interfaces and Post-Annealing Effects

Multistable rippling of graphene on SiC: A Density Functional Theory study

Measurement of interfacial thermal conductance of few-layer MoS<sub>2</sub> supported on different substrates using Raman spectroscopy

Thermal transport across the CoSb 3 -graphene interface.