Infrared Solar Cells Based on Narrow Band-Gap PbS QDs

Yong Xia,Sisi Liu,Kang Wang,Jianbing Zhang

DOI: https://doi.org/10.1364/isst.2019.jw4a.31

2019-01-01

Abstract:Infrared solar cells based on narrow band-gap PbS QDs can harvest low-energy photons. Here, we report that the infrared solar cell based on 0.80 eV PbS QDs with excellent performance ,which exhibiting cSi-filtered PCE of 0.78%.

What problem does this paper attempt to address?

Cation‐Exchange Synthesis of Highly Monodisperse PbS Quantum Dots from ZnS Nanorods for Efficient Infrared Solar Cells

Yong Xia,Sisi Liu,Kang Wang,Xiaokun Yang,Linyuan Lian,Zhiming Zhang,Jungang He,Guijie Liang,Song Wang,Manlin Tan,Haisheng Song,Daoli Zhang,Jianbo Gao,Jiang Tang,Matthew C. Beard,Jianbing Zhang

DOI: https://doi.org/10.1002/adfm.201907379

IF: 19

2019-11-04

Advanced Functional Materials

Abstract:Infrared solar cells that utilize low‐bandgap colloidal quantum dots (QDs) are promising devices to enhance the utilization of solar energy by expanding the harvested photons of common photovoltaics into the infrared region. However, the present synthesis of PbS QDs cannot produce highly efficient infrared solar cells. Here, a general synthesis is developed for low‐bandgap PbS QDs (0.65–1 eV) via cation exchange from ZnS nanorods (NRs). First, ZnS NRs are converted to superlattices with segregated PbS domains within each rod. Then, sulfur precursors are released via the dissolution of the ZnS NRs during the cation exchange, which promotes size focusing of PbS QDs. PbS QDs synthesized through this new method have the advantages of high monodispersity, ease‐of‐size control, in situ passivation of chloride, high stability, and a "clean" surface. Infrared solar cells based on these PbS QDs with different bandgaps are fabricated, using conventional ligand exchange and device structure. All of the devices produced in this manner show excellent performance, showcasing the high quality of the PbS QDs. The highest performance of infrared solar cells is achieved using ≈0.95 eV PbS QDs, exhibiting an efficiency of 10.0% under AM 1.5 solar illumination, a perovskite‐filtered efficiency of 4.2%, and a silicon‐filtered efficiency of 1.1%.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Efficient quantum dot infrared solar cells with enhanced low-energy photon conversion via optical engineering

Sisi Liu,Ming-Yu Li,Kao Xiong,Jianbo Gao,Xinzheng Lan,Daoli Zhang,Liang Gao,Jianbing Zhang,Jiang Tang

DOI: https://doi.org/10.1007/s12274-022-4906-1

IF: 9.9

2022-10-09

Nano Research

Abstract:Infrared (IR) solar cells are promising devices for improving the power conversion efficiency (PCE) of conventional solar cells by expanding the utilization region of the sunlight spectrum to near-infrared range. IR solar cells based on colloidal quantum dots (QDs) have attracted extensive attention due to the widely tunable absorption spectrum controlled by dot size and the unique solution processibility. However, the trade-off in QD solar cells between light absorption and photo-generated carrier collection has limited the further improvement of PCE. Here, we present high-performance PbS QD IR solar cells resulting from the combination of boosted light absorption and optimized carrier extraction. By constructing an optical resonance cavity, the light absorption is significantly enhanced in the range of 1,150–1,300 nm at a relatively thin photoactive layer. Meanwhile, the thin photoactive layer facilitates efficient carrier extraction. Consequently, the PbS QD IR solar cells exhibit a highly efficient photoelectric conversion in the IR region, resulting in a high IR PCE of 1.3% which is comparable to the highest value of solution-processed IR solar cells based on PbSe QDs. These results demonstrate that constructing an optical resonance cavity is a reasonable strategy for effective conversion of photons in the devices aiming at light in a relatively narrow wavelength range, such as IR solar cells and narrow band photodetectors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Xuyong Yang,Fuqiang Ren,Yue Wang,Tao Ding,Handong Sun,Dongling Ma,Xia Wei Sun

DOI: https://doi.org/10.1038/s41598-017-15244-5

IF: 4.6

2017-11-07

Scientific Reports

Abstract:PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3–1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic–inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr−1 m−2 and peak external quantum efficiency (EQE) of 4.12%, respectively.

multidisciplinary sciences
Efficient Quantum Dot Infrared Photovoltaic with Enhanced Charge Extraction via Applying Gradient Electron Transport Layers

Sisi Liu,Chengjie Deng,Meng Wang,Aoshen Wei,Tianyu Luo,Haifei Lu,Xiaoyan Wen,Ming‐Yu Li,Jianbing Zhang

DOI: https://doi.org/10.1002/adom.202303256

IF: 9

2024-03-04

Advanced Optical Materials

Abstract:Quantum dot (QD) infrared (IR) solar cells are promising photovoltaic devices to improve utilization of sunlight energy by broadening absorption range of the sunlight spectrum to short‐wave infrared region. Herein, a novel and simple gradient electron transport layer is developed for achieving high‐performance QD IR solar cells. The results demonstrate a promising strategy for exploiting high‐performance infrared optoelectronic devices. PbS quantum dot (QD) infrared (IR) solar cells that can absorb low‐energy photons are promising photovoltaic devices to improve utilization of sunlight energy by broadening absorption range of the sunlight spectrum to short‐wave infrared region. For PbS QD photovoltaics, depleted heterojunction established between photoactive layer and ZnO electron transport layer (ETL) is critical to determine the performance of devices. However, undesired defects in ZnO films and mismatched energy levels have limited the improvement of device properties. Herein, a novel and simple gradient ZnO ETL is developed for achieving high‐performance QD IR solar cells by depositing a Cs‐doped ZnO thin layer on the pristine ZnO film. The resulting gradient ETL exhibits significantly suppressive trap states and a much smoother surface, efficiently reducing the trap‐assisted nonradiative recombination at the interfaces. Meanwhile, realigned energy levels of the gradient ZnO ETL facilitate the transport and extraction of photogenerated carriers. As a result, the champion device shows a high IR open circuit voltage (VOC) of 0.446 V and IR power conversion efficiency (PCE) of 1.27% under 1100 nm filtered illumination. The VOC and PCE are 0.507 V and 11.04% under AM1.5 illumination, respectively. These results demonstrate a promising strategy for exploiting high‐performance infrared optoelectronic devices.

materials science, multidisciplinary,optics
Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation

Sisi Liu,Chongjian Zhang,Shuangyuan Li,Yong Xia,Kang Wang,Kao Xiong,Haodong Tang,Linyuan Lian,Xinxing Liu,Ming‐Yu Li,Manlin Tan,Liang Gao,Guangda Niu,Huan Liu,Haisheng Song,Daoli Zhang,Jianbo Gao,Xinzheng Lan,Kai Wang,Xiao Wei Sun,Ye Yang,Jiang Tang,Jianbing Zhang

DOI: https://doi.org/10.1002/adfm.202006864

IF: 19

2020-12-03

Advanced Functional Materials

Abstract:Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single‐junction solar cells by harvesting the low‐energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open‐circuit voltages (VOC) and short circuit current densities (JSC), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap‐state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR JSC of 6.38 mA cm−2 and IR VOC of 0.347 V are simultaneously achieved under the 1100 nm‐filtered solar illumination, providing a new route to unfreeze the trade‐off between VOC and JSC limited by the photoactive layer with a given bandgap.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots

Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos

DOI: https://doi.org/10.48550/arXiv.1909.10264

2019-09-23

Abstract:Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with bandgap lower than 0.8 eV have been limited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized by high manufacturing costs and complicated lattice matching requirements in their growth and integration with the higher bandgap cells. Here, we have developed solution processed low bandgap photovoltaic devices based on PbS colloidal quantum dots (CQDs) with a bandgap of 0.7 eV suited for both thermo-photovoltaic as well as low energy solar photon harvesting. By matching the spectral response of those cells to that of the infrared solar spectrum, we report a record high short circuit current (JSC) of 37 mA/cm2 under full solar spectrum and 5.5 mA/cm2 when placed at the back of a silicon wafer resulting in power conversion efficiencies (PCE) of 6.4 % and 0.7 % respectively. Moreover, the device reached an above bandgap PCE of ~6 % as a thermo-photovoltaic cell recorded under a 1000 °C blackbody radiator.

Materials Science,Applied Physics
Efficient Near‐Infrared PbS Quantum Dot Solar Cells Employing Hydrogenated In2O3 Transparent Electrode

Ciyu Ge,Erqi Yang,Xinzhao Zhao,Can Yuan,Sen Li,Chong Dong,Yingfeng Ruan,Liuchong Fu,Yuming He,XiangBin Zeng,Haisheng Song,Bin Hu,Chao Chen,Jiang Tang

DOI: https://doi.org/10.1002/smll.202203677

IF: 13.3

2022-10-01

Small

Abstract:A simple and low‐cost method is developed to fabricate high‐mobility (98 cm2 V−1 s−1) and high transmittance (85.2%@1300 nm) IHO film. Using the IHO film as the transparent electrode, a record Si‐filtered efficiency of 1.25% is achieved on narrow‐bandgap PbS quantum do solar cells. Infrared solar cells are regarded as candidates for expanding the solar spectrum of c‐Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near‐infrared region, most near‐infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose a simple procedure to fabricate the window materials with high near‐infrared transmittance and high electrical conductivity, namely the hydrogen‐doped indium oxide (IHO) films prepared by room temperature magnetron sputtering. The low‐temperature annealed IHO conductive electrodes exhibit high mobility of 98 cm2 V−1 s−1 and high infrared transmittance of 85.2% at 1300 nm, which endows the lead quantum dot infrared solar cell with an improved short‐circuit current density of 37.2 mA cm−2 and external quantum efficiency of 70.22% at 1280 nm. The proposed preparation process is simple and compatible with existing production lines, which gifts the IHO transparent conductive film great potential in broad applications that simultaneously require high infrared transmittance and high conductivity.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
PbS Colloidal Quantum Dot Inks for Infrared Solar Cells

Siyu Zheng,Jingxuan Chen,Erik M. J. Johansson,Xiaoliang Zhang

DOI: https://doi.org/10.1016/j.isci.2020.101753

IF: 5.8

2020-01-01

iScience

Abstract:Infrared PbS colloidal quantum dot (CQD)-based materials receive significant attention because of its unique properties. The PbS CQD ink that originates from ligand exchange of CQDs is highly potential for efficient and stable infrared CQD solar cells (CQDSCs) using low-temperature solution-phase processing. In this review, we present a comprehensive overview of CQD inks for the development of efficient infrared solar cells, which can effectively harvest the photons from the infrared wavelength region of the solar spectrum, including the importance of infrared absorbers for solar cells, the unique properties of CQDs, ligand-exchange determined CQD inks, and related photovoltaic performance of CQDSCs. Finally, we present a brief conclusion, and the possible challenges and opportunities of the CQD inks are discussed in-depth to further develop highly efficient and stable infrared solar cells.
Pb‐Free Infrared Harvesting Colloidal Quantum Dot Solar Cells Using n‐p Homojunction Architecture

Youngsang Park,Jugyoung Kim,Minwoo Jeong,Daekwon Shin,Jaegwan Jung,Hyoin Kim,Hyeonjun Jeong,Hyojung Kim,Yong‐Hyun Kim,Sohee Jeong

DOI: https://doi.org/10.1002/aenm.202404141

IF: 27.8

2024-11-24

Advanced Energy Materials

Abstract:The first fabrication of Pb‐free colloidal quantum dots photovoltaics (PVs) harvesting infrared light beyond Si PVs is presented. Through materials and architecture designs, InAs‐based homojunction enables the enhanced open‐circuit voltage from 0.05 to 0.26 V and fill factor from 29% to 50%, comparable to Pb‐based PVs. It exhibits a power conversion efficiency of 2.00% under one sun and 0.27% with a Si filter, outperforming control ones (0.28% and 0.03%). Harvesting infrared (IR) sunlight using colloidal quantum dots (CQDs) holds significant promise for optoelectronic devices including photovoltaics (PVs) and self‐powered sensors. Traditionally, Pb chalcogenides have been utilized in energy devices, but needs for RoHS compliance derive the development of Pb‐free alternatives. A key challenge with Pb‐free materials is the low photovoltage in devices, primarily due to recombination in surface defects and interfaces within the architectures. Here, the Pb‐free CQD PVs capable of harvesting the IR light beyond the Si PVs are first presented. Designing an InAs CQD‐based homojunction architecture, with n‐type InAs absorbers passivated with multifunctional ligands and p‐type conductive InAs inks, efficient charge extraction is achieved while suppressing interface recombination. Additionally, the IR light path is modulated to match the absorber's absorption to optimize the performance. This led to InAs PVs with absorber bandgaps ranging from 1.35 to 1.03 eV, significantly improving the open‐circuit voltage from 0.05 to 0.26 V and fill factor from 29% to 50%, comparable to Pb‐based PVs. The InAs IR‐PVs exhibit a power conversion efficiency of 2.00% under one‐sun and 0.27% with a Si filter, outperforming control ones (0.28% and 0.03%). This work provides an effective strategy for designing Pb‐free, energy‐independent IR optoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Optical engineering of infrared PbS CQD photovoltaic cells for wireless optical power transfer systems

Mengqiong Zhu,Yuanbo Zhang,Shuaicheng Lu,Zijun Wang,Junbing Zhou,Wenkai Ma,Ruinan Zhu,Guanyuan Chen,Jianbing Zhang,Liang Gao,Jiancan Yu,Pingqi Gao,Jiang Tang

DOI: https://doi.org/10.1007/s12200-023-00069-0

2023-06-15

Abstract:Infrared photovoltaic cells (IRPCs) have attracted considerable attention for potential applications in wireless optical power transfer (WOPT) systems. As an efficient fiber-integrated WOPT system typically uses a 1550 nm laser beam, it is essential to tune the peak conversion efficiency of IRPCs to this wavelength. However, IRPCs based on lead sulfide (PbS) colloidal quantum dots (CQDs) with an excitonic peak of 1550 nm exhibit low short circuit current (Jsc) due to insufficient absorption under monochromatic light illumination. Here, we propose comprehensive optical engineering to optimize the device structure of IRPCs based on PbS CQDs, for 1550 nm WOPT systems. The absorption by the device is enhanced by improving the transmittance of tin-doped indium oxide (ITO) in the infrared region and by utilizing the optical resonance effect in the device. Therefore, the optimized device exhibited a high short circuit current density of 37.65 mA/cm2 under 1 sun (AM 1.5G) solar illumination and 11.91 mA/cm2 under 1550 nm illumination 17.3 mW/cm2. Furthermore, the champion device achieved a record high power conversion efficiency (PCE) of 7.17% under 1 sun illumination and 10.29% under 1550 nm illumination. The PbS CQDs IRPCs under 1550 nm illumination can even light up a liquid crystal display (LCD), demonstrating application prospects in the future.
Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

Xiaoliang Zhang,Jindan Zhang,Dibya Phuyal,Juan Du,Lei Tian,Viktor A. Oberg,Malin B. Johansson,Ute B. Cappel,Olof Karis,Jianhua Liu,Hakan Rensmo,Gerrit Boschloo,Erik M. J. Johansson

DOI: https://doi.org/10.1002/aenm.201702049

IF: 27.8

2017-01-01

Advanced Energy Materials

Abstract:Solution‐processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI3 perovskite (CsPbI3‐P) coating on PbS CQDs with a low‐temperature, solution‐processed approach is reported. The PbS CQD solar cell with CsPbI3‐P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long‐term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI3‐P coating, and the results suggest that the lattice coherence between CsPbI3‐P and PbS results in epitaxial induced growth of the CsPbI3‐P coating. The improved passivation significantly diminishes the sub‐bandgap trap‐state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.
Efficient Near-Infrared PbS Quantum Dot Solar Cells Employing Hydrogenated In2 O3 Transparent Electrode.

Ciyu Ge,Erqi Yang,Xinzhao Zhao,Can Yuan,Sen Li,Chong Dong,Yingfeng Ruan,Liuchong Fu,Yuming He,XiangBin Zeng,Haisheng Song,Bin Hu,Chao Chen,Jiang Tang

DOI: https://doi.org/10.1002/smll.202203677

IF: 13.3

2022-01-01

Small

Abstract:Infrared solar cells are regarded as candidates for expanding the solar spectrum of c-Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near-infrared region, most near-infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose a simple procedure to fabricate the window materials with high near-infrared transmittance and high electrical conductivity, namely the hydrogen-doped indium oxide (IHO) films prepared by room temperature magnetron sputtering. The low-temperature annealed IHO conductive electrodes exhibit high mobility of 98 cm(2) V-1 s(-1) and high infrared transmittance of 85.2% at 1300 nm, which endows the lead quantum dot infrared solar cell with an improved short-circuit current density of 37.2 mA cm(-2) and external quantum efficiency of 70.22% at 1280 nm. The proposed preparation process is simple and compatible with existing production lines, which gifts the IHO transparent conductive film great potential in broad applications that simultaneously require high infrared transmittance and high conductivity.
Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Sisi Liu,Kao Xiong,Kang Wang,Guijie Liang,Ming-Yu Li,Haodong Tang,Xiaokun Yang,Zhen Huang,Linyuan Lian,Manlin Tan,Kai Wang,Liang Gao,Haisheng Song,Daoli Zhang,Jianbo Gao,Xinzheng Lan,Jiang Tang,Jianbing Zhang

DOI: https://doi.org/10.1021/acsnano.0c10373

IF: 17.1

2021-01-29

ACS Nano

Abstract:Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (VOC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high VOC and a high short circuit current density (JSC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c10373?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c10373</a>.Supplementary figures and the performance parameters of devices (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c10373/suppl_file/nn0c10373_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Breaking the Size Limitation of Directly-Synthesized PbS Quantum Dot Inks Toward Efficient Short-wavelength Infrared Optoelectronic Applications.

Suidong Wang,Gao Xu,Qiao Zhang,Jianlong Xu,Muhan Cao,Shiwen Fang,Guozheng Shi,Kunyuan Lu,Zeke Liu,Jun Liu,Leliang Song,Qian Yang,Xingyi Lyu,Muhammad Irfan Ullah,Y. Gao,Xingyu Zhou,Hao Wu,Tao Li,Yang Liu,Wanli Ma

DOI: https://doi.org/10.1002/anie.202300396

2023-02-27

Angewandte Chemie

Abstract:PbS quantum dots (QDs) are promising building blocks for solution-processed short-wavelength infrared (SWIR) devices. The recently developed direct synthesis of semi-conductive PbS QD inks has substantially simplified the preparation processing and reduced the material cost, while facing the challenge to synthesize large-size QDs with absorption covering the SWIR region. Herein, we for the first time realize a low-cost, scalable synthesis of SWIR PbS QD inks after an extensive investigation of the reaction kinetics. Finally, based on these PbS SWIR QD inks, the solar cell demonstrates a record-high power conversion efficiency (PCE) of 1.44% through an 1100 nm cutoff silicon filter and the photodetector device shows a low dark current density of 2 × 10-6 A cm-2 at -0.8 V reverse bias with a high external quantum efficiency (EQE) of 70% at ~1300 nm. Our results realize the direct synthesis of low-cost and scalable SWIR QD inks and may accelerate the industrialization of consumer SWIR technologies.

Medicine,Engineering,Physics,Materials Science
Hole transfer from PbS nanocrystal quantum dots to polymers and efficient hybrid solar cells utilizing infrared photons

Yanguang Zhang,Zhao Li,Jianying Ouyang,Sai-Wing Tsang,Jianping Lu,Kui Yu,Jianfu Ding,Ye Tao

DOI: https://doi.org/10.1016/j.orgel.2012.08.009

IF: 3.868

2012-01-01

Organic Electronics

Abstract:Polymer/inorganic-nanocrystals bulk heterojunction solar cells, where inorganic semiconductor nanocrystals such as CdSe, CdS, CdTe, ZnO, TiO2, and silicon, replace the fullerene molecules as the electron acceptors, typically exhibit a power conversion efficiency (PCE) below 3% even after tremendous engineering efforts to optimize the nanocrystal size, shape, and nanoscale morphology. One promising feature of polymer hybrid solar cells is the ability to sensitize conjugated polymers, which on their own absorb only in the visible part of solar spectrum, into the infrared spectral range using infrared-active lead salt nanocrystal quantum dots (NQDs). Here we observed for the first time hole transfer from PbS NQDs to polymers as evidenced by the quenching of the PbS photoluminescence (PL), a sign of the presence of charge separating type II heterojunction. The type II band-offset at the NQD/polymer heterojunction enables efficient hole extraction from NQDs and leads to a record PCE of 3.80%, realized in a planar junction configuration under simulated air mass 1.5 global (AM 1.5G) irradiation of 100mW/cm2. The photocurrent has an extended spectral range spanning from the ultraviolet (UV) to the infrared (IR). Contributions from the polymer and PbS to the photocurrent were identified. Infrared photons (>700nm) contribute about 30% of the photocurrent and yield a high external quantum efficiency (EQE) of 20% at 1050nm.
Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Yuanlin Shi,Zhiming Wu,Zihao Xiang,Pengyu Chen,Chunyu Li,Hongxi Zhou,Xiang Dong,Jun Gou,Jun Wang,Yadong Jiang

DOI: https://doi.org/10.1088/1361-6528/abb105

IF: 3.5

2020-09-15

Nanotechnology

Abstract:Silicon-based photodetectors as the main force in visible and near-infrared detection devices have been deeply embedded in modern technology and human society, but due to the characteristics of silicon itself, its response wavelength is generally less than 1100 nm. It is an interesting study to combine the state-of-art silicon processing with emerging infrared-sensitive Lead sulfide colloidal quantum dots (PbS-CQDs) to produce a photodetector that can detect infrared light. Here, we demonstrated a silicon-compatible photodetector that could be integrated on-chip, and also sensitive to infrared light which is owing to a PbS-CQDs absorption layer with tunable bandgap. The device exhibit extremely high gain which reaches maximum detectivity , fast response 211/558 μs, and extremely high external quantum efficiency , which is owing to new architecture and reasonable ligand exchange options. The performance of the device originates from the new architecture, that is, using the photovoltaic voltage generated by the surface of PbS-CQDs to change the width of the depletion layer to achieve detection. Besides, the performance improvement of devices comes from the addition of PbS-CQDs (Ethanedithiol treated) layer, which effectively reduces the fall time and makes the device expected to work at higher frequencies. Our work paves the way for the realization of cost-efficient high-performance silicon compatible infrared optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells

Xinzhao Zhao,Mingyu Li,Tianjun Ma,Jun Yan,Gomaa Mohamed Gomaa Khalaf,Chao Chen,Hsien-Yi Hsu,Haisheng Song,Jiang Tang

DOI: https://doi.org/10.1007/s12200-023-00085-0

2023-10-28

Frontiers of Optoelectronics

Abstract:Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid–base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm 2 of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.

engineering, electrical & electronic
Efficient PbSe Quantum Dot Infrared Photovoltaic Applying MXene Modified ZnO Electron Transport Layer

Sisi Liu,Meng Wang,Xiong Yu,Hao Li,Haifei Lu,Xiaoyan Wen,Ming‐Yu Li,Jianbing Zhang

DOI: https://doi.org/10.1002/adom.202301252

IF: 9

2023-08-04

Advanced Optical Materials

Abstract:Infrared (IR) solar cells are promising optoelectronic devices for boosting the power conversion efficiency of conventional photovoltaics by haversting the low‐energy IR photons. Here, a new hybrid electron transport layer composed of 2D MXene and sol‐gel ZnO is adopted to fabricate high‐performance PbSe quantum dot IR solar cells. The results demonstrate a bright approach for developing high‐performance optoelectronic devices. Infrared (IR) solar cells are potential optoelectronic devices for boosting the power conversion efficiency (PCE) of conventional photovoltaics (such as pervoskite and silicon solar cells) by broadening the utilization range of the sunlight spectrum to short‐wavelength infrared region. PbSe colloidal quantum dots (QDs) are one of the optimal candidates for IR solar cells because of their tunable bandgap in the IR region and flexible solution processibility. At present, the best PbSe QD IR photovoltaics generally adopt ZnO as an electron transport layer (ETL). However, the intrinsic drawbacks and surface defects of ZnO can potentially deteriorate the PCE of devices. Herein, Ti3C2Tx, a representative 2D transition carbide, is combined with sol‐gel ZnO to develop a new hybrid ETL for fabricating high‐performance IR solar cells. This combination effectively suppresses the defects within ZnO by forming new bondings and simultaneously enhances the crystalline of ZnO film. Meanwhile, the introduction of Ti3C2Tx into ZnO film accelerates the transport and collection of photo‐generated carriers by constructing a new electron transport pathway. Consequently, compared to the bare devices, the infrared PCE of PbSe QD solar cells increases by 19.5% to 1.04%. These results demonstrate that this hybrid ETL can offer a bright approach for developing high‐performance optoelectronic devices.

materials science, multidisciplinary,optics
Colloidal Quantum Dot for Infrared-Absorbing Solar Cells: State-of-the-art and Prospects

Siyu Zheng,Xinyi Mei,Jingxuan Chen,Erik M. J. Johansson,Xiaoliang Zhang

DOI: https://doi.org/10.26599/nre.2023.9120095

2024-01-01

Abstract:Colloidal quantum dot (CQD) shows great potential for application in infrared solar cells due to the simple synthesis techniques, tunable infrared absorption spectrum, and high stability and solution-processability. Thanks to significant efforts made on the surface chemistry of CQDs, device structure optimization, and device physics of CQD solar cells (CQDSCs), remarkable breakthroughs are achieved to boost the infrared photovoltaic performance and stability of CQDSCs. In particular, the CQDSC with a high power conversion efficiency of ~ 14% and good stability is reported, which is very promising for infrared-absorbing solar cells. In this review, we highlight the unique optoelectronic properties of CQDs for the development of infrared-absorbing solar cells. Meanwhile, the latest advances in finely controlling surface properties of CQDs are comprehensively summarized and discussed. Moreover, the device operation of CQDSCs is discussed in-depth to highlight the impact of the device structure optimization of CQDSCs on their photovoltaic performance, and the emerging novel types of CQDSCs, such as semitransparent, flexible, and lightweight CQDSCs, are also demonstrated. The device stability of CQDSCs is also highlighted from the viewpoint of practical applications. Finally, the conclusions and possible challenges and opportunities are presented to promote the development steps of the CQDSCs with higher infrared photovoltaic performance and robust stability.
Electroluminescent Solar Cells Based on CsPbI 3 Perovskite Quantum Dots

Yao Wang,Chenghao Duan,Xuliang Zhang,Jianguo Sun,Xufeng Ling,Junwei Shi,Long Hu,Zizhen Zhou,Xianxin Wu,Wei Han,Xinfeng Liu,Claudio Cazorla,Dewei Chu,Shujuan Huang,Tom Wu,Jianyu Yuan,Wanli Ma

DOI: https://doi.org/10.1002/adfm.202108615

IF: 19

2021-10-27

Advanced Functional Materials

Abstract:All‐inorganic CsPbX3 (X = Cl, Br, I, or mixed halides) perovskite quantum dots (QDs) exhibit tunable optical bandgaps and narrow emission peaks, which have received worldwide interest in the field of both photovoltaics (PVs) and light‐emitting diodes (LEDs). Herein, it is reported a discovery that CsPbI3 perovskite QD solar cell can simultaneously deliver high PV performance and intense electroluminescence. In specific, the multifunctional CsPbI3 QD film is fabricated through a simple yet efficient solid‐state‐ligand exchange process using a tailored organic ligand triphenyl phosphite (TPPI). The function of QD surface manipulation using TPPI here is proven to be twofold, balancing the carrier transport and effectively passivating the QD surface to produce conductive and emissive QD film. The CsPbI3 perovskite QD solar cell delivers a champion efficiency of 15.21% with improved open circuit voltage and high fill factor. Concurrently functioning as a red LED, the CsPbI3 perovskite QD solar cell outputs electric power to light conversion efficiency approaching 4%, a record value for QD electroluminescent PVs. The results here indicate that these versatile perovskite QDs may be a promising candidate for fabricating multifunctional optoelectronic devices. In this study it is reported an electroluminescent solar cell using CsPbI3 quantum dots (QDs) via solid‐state‐ligand exchange process using organic ligand triphenyl phosphite; the device achieves a champion efficiency of 15.21%, and an overall electric power to light conversion efficiency of 3.80% in red light‐emitting diode function, a record value for QD photovoltaics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Infrared Solar Cells Based on Narrow Band-Gap PbS QDs

Cation‐Exchange Synthesis of Highly Monodisperse PbS Quantum Dots from ZnS Nanorods for Efficient Infrared Solar Cells

Efficient quantum dot infrared solar cells with enhanced low-energy photon conversion via optical engineering

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Efficient Quantum Dot Infrared Photovoltaic with Enhanced Charge Extraction via Applying Gradient Electron Transport Layers

Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation

Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots

Efficient Near‐Infrared PbS Quantum Dot Solar Cells Employing Hydrogenated In2O3 Transparent Electrode

PbS Colloidal Quantum Dot Inks for Infrared Solar Cells

Pb‐Free Infrared Harvesting Colloidal Quantum Dot Solar Cells Using n‐p Homojunction Architecture

Optical engineering of infrared PbS CQD photovoltaic cells for wireless optical power transfer systems

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

Efficient Near-Infrared PbS Quantum Dot Solar Cells Employing Hydrogenated In2 O3 Transparent Electrode.

Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Breaking the Size Limitation of Directly-Synthesized PbS Quantum Dot Inks Toward Efficient Short-wavelength Infrared Optoelectronic Applications.

Hole transfer from PbS nanocrystal quantum dots to polymers and efficient hybrid solar cells utilizing infrared photons

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells

Efficient PbSe Quantum Dot Infrared Photovoltaic Applying MXene Modified ZnO Electron Transport Layer

Colloidal Quantum Dot for Infrared-Absorbing Solar Cells: State-of-the-art and Prospects

Electroluminescent Solar Cells Based on CsPbI 3 Perovskite Quantum Dots